Databook.fxp 1/13/99 2:09 PM Page F-46 F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C Device in this Databook based on the NJ1800DL Process. S Datasheet IF1801 Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ1800DL Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 15 – 25 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 10V, VDS = ØV 50 800 mA VDS = 10V, VGS = ØV – 0.1 –4 V VDS = 10V, ID = 1 nA – 30 Dynamic Electrical Characteristics Forward Transconductance (Pulsed) gfs 350 mS VDS = 10V, VGS = ØV f = 1 kHz Input Capacitance Ciss 160 pF ID = 1 mA, VGS = ØV f = 1 MHz Feedback Capacitance Crss 50 pF VDS = 10V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 0.7 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDG = 4V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-47 F-47 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.3 V 500 500 Transconductance in mS Drain Current in mA VGS = Ø V 400 VGS = –0.5 V 300 VGS = –1.0 V 200 VGS = –1.5 V 100 VGS = –2.0 V 2 4 6 200 100 0 –1 –2 –3 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Gfs as a Function of IDSS 1000 –4 350 800 600 400 200 300 250 200 150 100 0 –1 –2 –3 –4 0 20 40 60 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency Input Capacitance as a Function of VGS 3.0 80 600 IDSS = 40 mA VDG = 4 V ID = 5 mA 2.5 2.0 Input Capacitance in pF ENoise Voltage in nV/√Hz 300 8 Transconductance in mS Drain Saturation Current in mA 0 400 1.5 1.0 0.5 10 100 1K Frequency in Hz 10K 100K VDS = Ø V 500 400 300 200 100 0 –4 –8 – 12 Gate Source Voltage in Volts – 16