DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tube 50 p/tube TO-220 (MP-25K) typ. 1.9 g Note Note Pb-free (This product does not contain Pb in the external electrode). FEATURES (TO-220) • Super low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 35 A) • Channel temperature 175 degree rated ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 115 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Drain Current (pulse) Note1 Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 37 A Repetitive Avalanche Energy Note2 EAR 137 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.30 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18664EJ3V0DS00 (3rd edition) Date Published November 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2007 NP70N04MUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 V | yfs | VDS = 5 V, ID = 35 A 25 RDS(on) VGS = 10 V, ID = 35 A Input Capacitance Ciss VDS = 25 V, 4900 pF Output Capacitance Coss VGS = 0 V, 480 pF Reverse Transfer Capacitance Crss f = 1 MHz 310 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 35 A, 25 ns Rise Time tr VGS = 10 V, 18 ns Turn-off Delay Time td(off) RG = 0 Ω 63 ns Fall Time tf 12 ns Total Gate Charge QG VDD = 32 V, 90 nC Gate to Source Charge QGS VGS = 10 V, 21 nC QGD ID = 70 A 31 nC VF(S-D) IF = 70 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = 70 A, VGS = 0 V, 37 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 42 nC Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note 49 S 4.0 5.0 mΩ 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D18664EJ3V0DS td(on) ton tf toff NP70N04MUG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 0 175 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C <R> 25 FORWARD BIAS SAFE OPERATING AREA 100 R (o DS (V n) GS ID(pulse) d it e Lim V ) 0 i =1 PW =1 i 00 μs i 1i m ID(DC) DC i ms wn d it e Lim d it e im nL o kd ea io at TC = 25°C Single pulse Br ip i ss 1 1i 0 s D er 10 y ar nd co Se w Po 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 1.30°C/Wi 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18664EJ3V0DS 3 NP70N04MUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 ID - Drain Current - A ID - Drain Current - A 300 200 100 Tch = −55°C 25°C 75°C 150°C 175°C 100 10 1 VGS = 10 V Pulsed VDS = 10 V Pulsed 0 0.1 0.5 1 1.5 0 1 2 5 6 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 3.5 3 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0.5 0 -75 -25 25 75 125 175 100 Tch = −55°C 25°C 75°C 150°C 175°C 10 VDS = 5 V Pulsed 1 0.1 225 1 VGS = 10 V Pulsed 6 4 2 0 10 100 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 8 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 4 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 10 ID - Drain Current - A 4 3 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 ID = 35 A Pulsed 8 6 4 2 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18664EJ3V0DS 20 NP70N04MUG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 8 10000 VGS = 10 V ID = 35 A Ciss, Coss, Crss - Capacitance - pF 6 4 2 Pulsed 0 -75 -25 25 75 125 175 Ciss Coss 1000 Crss VGS = 0 V f = 1 MHz 100 0.01 225 Tch - Channel Temperature - °C 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 VDD = 20 V VGS = 10 V RG = 0 Ω td(off) 100 td(on) tf tr 10 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 12 35 VDD = 32 V 20 V 8V 30 9 25 20 6 VGS 15 3 10 VDS 5 ID = 70 A 0 1 0.1 1 10 0 100 20 40 60 80 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 0 100 1000 100 VGS = 10 V 0V 10 1 Pulsed trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 0.1 100 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 0 0.5 1 1.5 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D18664EJ3V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP70N04MUG PACKAGE DRAWING (Unit: mm) TO-220 (MP-25K) 3 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 3.1±0.2 2 13.7±0.3 1 6.3±0.3 4 4.45±0.2 1.3±0.2 15.9 MAX. φ 3.8±0.2 2.8±0.3 10.0±0.2 0.5±0.2 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18664EJ3V0DS NP70N04MUG MARKING INFORMATION NEC 70N04 UG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP70N04MUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Wave soldering Maximum temperature (Solder temperature): 260°C or below MP-25K Time: 10 seconds or less Recommended Condition Symbol THDWS Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below MP-25K Time (per side of the device): 3 seconds or less P350 Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18664EJ3V0DS 7 NP70N04MUG • The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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