DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Super low on-state resistance: (TO-251) R DS(on)1 = 6.5 mΩ MAX. (V GS = 10 V, I D = 30 A) R DS(on)2 = 9.1 mΩ MAX. (V GS = 4.5 V, I D = 30 A) • Low Ciss : C iss = 2700 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±60 A A Drain Current (pulse) Note1 ID(pulse) ±240 Total Power Dissipation (TC = 25°C) PT1 84 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C Repetitive Avalanche Current Note2 IAS 32 A Repetitive Avalanche Energy Note2 EAS 100 mJ Storage Temperature Notes 1. 2. (TO-252) PW ≤ 10 µs, Duty Cycle ≤ 1% V DD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, Tch(peak) ≤ 150°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16538EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2003 2SK3716 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA 2.5 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 | yfs | VDS = 10 V, ID = 30 A 22 43 RDS(on)1 VGS = 10 V, ID = 30 A 5.2 6.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 30 A 6.6 9.1 mΩ S Input Capacitance Ciss VDS = 10 V 2700 pF Output Capacitance Coss VGS = 0 V 770 pF Reverse Transfer Capacitance Crss f = 1 MHz 290 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 30 A 11 ns VGS = 10 V 13 ns RG = 0 Ω 69 ns 14 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 32 V 50 nC Gate to Source Charge QGS VGS = 10 V 9 nC QGD ID = 60 A 13 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 60 A, VGS = 0 V 0.94 Reverse Recovery Time trr IF = 60 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 42 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D16538EJ2V0DS td(on) ton tf toff 2SK3716 TYPICAL CHARACTERISTICS (T A = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 P T - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 T C - Case Temperature - °C 50 75 100 125 150 175 T C - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 240 A 100 10 1 DC RDS(on) Limited (at VGS = 10 V) PW = 100 µs 1 ms Single Pulse 10 ms TC = 25°C 0.1 0.1 1 10 100 V DS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th(t) - Transient Thermal Resistance - °C/W I D - Drain Current - A ID(DC) = 60 A 1000 Channel to Ambient Rth(ch-A) = 125°C/W 100 10 1 Channel to Case Rth(ch-C) = 1.49°C/W 0.1 0.01 Single Pulse 0.001 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16538EJ2V0DS 3 2SK3716 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 300 250 I D - Drain Current - A I D - Drain Current - A Pulsed VGS = 10 V 200 4.5 V 150 100 4.0 V 100 1 0.1 50 0.01 0 0.001 0 0.5 1 1.5 2 TA = 150°C 75°C 25°C −55°C 10 VDS = 10 V Pulsed 0 2.5 1 VDS = 10 V ID = 1 mA 2 1.5 1 0.5 -50 0 50 100 150 200 100 TA = 150°C 75°C 25°C 10 −55°C 1 0.1 1 VGS = 4.0 V 14 12 10 4.5 V 8 10 V 6 4 2 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 16 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 18 16 ID = 60 A 30 A 12 A 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 V GS - Gate to Source Voltage - V I D - Drain Current - A 4 10 I D - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 18 5 VDS = 10 V Pulsed T ch - Channel Temperature - °C 20 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | y fs | - Forward Transfer Admittance - S V GS(off) - Gate Cut-off Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 0 -100 3 V GS - Gate to Source Voltage - V V DS - Drain to Source Voltage - V 2.5 2 Data Sheet D16538EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 16 10000 ID = 30 A Pulsed 14 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VGS = 4 V 12 4.5 V 10 10 V 8 6 4 2 VGS = 0 V f = 1 MHz Ciss 1000 Coss Crss 100 0 -100 -50 0 50 100 150 0.1 200 SWITCHING CHARACTERISTICS VDD = 20 V VGS = 10 V RG = 0 Ω td(off) 100 tf tr 10 td(on) 100 50 10 45 9 VDD = 32 V 20 V 8V 40 35 8 7 30 6 25 5 VGS 20 4 15 3 10 ID = 60 A Pulsed VDS 5 0 1 0.1 1 10 2 1 0 0 100 10 20 30 40 50 Q G - Gate Charge - nC I D - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 VGS = 10 V 100 4.5 V 10 0V 1 0.1 Pulsed 0.01 0 0.5 di/dt = 100 A/µs VGS = 0 V trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS V DS - Drain to Source Voltage - V t d(on), tr, td(off), tf - Switching Time - ns 1000 1 V DS - Drain to Source Voltage - V T ch - Channel Temperature - °C V GS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3716 1 1.5 10 0.1 V F(S-D) - Source to Drain Voltage - V 1 10 100 I F - Diode Forward Current - A Data Sheet D16538EJ2V0DS 5 2SK3716 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D16538EJ2V0DS 2SK3716 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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