DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 (MP-3ZK) FEATURES (TO-252) • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±55 A ID(pulse) ±220 A Drain Current (pulse) <R> Note1 Total Power Dissipation (TC = 25°C) PT1 77 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 30 A Repetitive Avalanche Energy Note2 EAR 90 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE <R> Channel to Case Thermal Resistance Rth(ch-C) 1.95 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17401EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2004 NP55N04SUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V | yfs | VDS = 10 V, ID = 28 A 12 23 RDS(on) VGS = 10 V, ID = 28 A Input Capacitance Ciss Output Capacitance Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S 5.0 6.5 mΩ VDS = 25 V, 3400 5100 pF Coss VGS = 0 V, 320 480 pF Reverse Transfer Capacitance Crss f = 1 MHz 210 380 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 28 A, 30 66 ns Rise Time tr VGS = 10 V, 52 130 ns Turn-off Delay Time td(off) RG = 0 Ω 78 156 ns Fall Time tf 12 30 ns Total Gate Charge QG VDD = 32 V, 63 95 nC Gate to Source Charge QGS VGS = 10 V, 12 nC QGD ID = 55 A 20 nC VF(S-D) IF = 55 A, VGS = 0 V 0.94 Reverse Recovery Time trr IF = 55 A, VGS = 0 V, 37 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 40 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D17401EJ2V0DS td(on) ton tf toff NP55N04SUG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 90 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 80 70 60 50 40 30 20 10 0 0 0 25 50 75 100 125 150 0 175 25 TC - Case Temperature - °C <R> 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA o S( 100 n) RD S G (V ID(pulse) d it e Li m V ) 0 i =1 PW =1 i ID(DC) 00 μs 1i DC i m m i s B n w n d it e m Li d it e m Li do ke ra t io pa y ar nd si is 1 TC = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH <R> rth(t) - Transient Thermal Resistance - °C/W 0.1 1i 0 s D er 10 co Se w Po ID - Drain Current - A 1000 1000 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 1.95°C/W 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D17401EJ2V0DS 3 NP55N04SUG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 250 ID - Drain Current - A 200 ID - Drain Current - A VDS = 10 V Pulsed 100 V GS = 10 V 150 100 50 10 TA = −55°C 25°C 125°C 175°C 1 0.1 0.01 Pulsed 0 0.001 0 0.4 0.8 1.2 1.6 2 0 1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 3.5 3 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0 -100 -50 0 50 100 150 4 5 6 100 VDS = 10 V Pulsed TA = −55°C 25°C 125°C 175°C 10 1 200 0.1 1 10 100 1000 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 8 6 VGS = 10 V 4 2 Pulsed 0 1 10 100 1000 10 ID - Drain Current - A 4 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 0.5 2 VGS - Gate to Source Voltage - V 8 28 A ID = 55 A 6 4 2 Pulsed 0 0 4 8 12 16 VGS - Gate to Source Voltage - V Data Sheet D17401EJ2V0DS 20 NP55N04SUG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 10000 Ciss, Coss, Crss - Capacitance - pF 8 6 4 VGS = 10 V ID = 28 A Pulsed 2 0 -100 Ciss 1000 0 50 100 150 200 0.1 1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 1000 VDD = 20 V VGS = 10 V RG = 0 Ω 100 td(off) tr td(on) tf 10 10 45 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns Crss 100 -50 Tch - Channel Temperature - °C VDD = 32 V 20 V 8V 40 35 8 30 6 VGS 25 20 4 15 10 ID = 55 A Pulsed VDS 5 1 2 0 0.1 1 10 100 0 0 ID - Drain Current - A 10 20 30 40 50 60 70 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 VGS = 10 V 100 10 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Coss VGS = 0 V f = 1 MHz 0V 1 0.1 Pulsed 0.01 di/dt = 100 A/μs VGS = 0 V 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D17401EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP55N04SUG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.14 MAX. 3 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D17401EJ2V0DS NP55N04SUG • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1