NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 1 6 2 5 3 4 2.0 ± 0.2 DESCRIPTION 0.2 (All Leads) 1.3 The UPA801T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications. 0.9 ± 0.1 0.7 +0.10 0.15 - 0.05 PIN OUT 0 ~ 0.1 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA801T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE1 Forward Current Gain at VCE = 3 V, IC = 7 mA fT Cre2 |S21E|2 NF hFE1/hFE2 Gain Bandwidth at VCE = 3 V, IC = 7 mA Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz GHz 120 4.5 pF Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB hFE Ratio: hFE1 = Smaller Value of Q1 or Q2 hFE2 = Larger Value pf Q1 or Q2 70 3.0 0.7 7 250 1.5 9 1.2 2.5 0.85 Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA801T-T1, 3K per reel. . California Eastern Laboratories UPA801T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V 200 2 El Pe em rE en ts lem in en To t Collector Current, IC (mA) Total Power Dissipation, PT (mW) 20 al t 100 0 25 50 100 10 0.5 0 150 1.0 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 lB=160 µA VCE = 3 V 20 DC Current Gain, hFE Collector Current, IC (mA) 140 µA 120 µA 100 µA 15 80 µA 10 60 µA 40 µA 100 50 20 5 20 µA 10 0 5 Collector to Emitter Voltage, VCE (V) 10 0.5 1 5 10 Collector Current, IC (mA) 50 UPA801T TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 VCE = 3 V f = 1 GHz Insertion Power Gain, IS21eI2 (dB) Gain Bandwidth Product, fT (GHz) 20 10 5 2 1 1 5 10 5 0.5 50 1 5 10 50 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY 100 24 6 Insertion Power Gain, IS21eI2 (dB) VCE = 3 V f = 1 GHz Noise Figure (dB) 10 0 0.5 4 2 VCE = 3 V lc = 7 mA 20 16 12 8 4 0 0 0.5 1.0 5.0 10 50 100 Collector Current, IC (mA) 5.0 f = 1 MHz 2.0 1.0 0.5 0.2 0.1 1 2 5 10 20 Collector to Base Voltage, VCB (V) 0.1 0.2 0.5 1.0 2.0 Frequency, f (GHz) FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feed Back Capacitance, CRE (pF) VCE = 3 V f = 1 GHz 50 5.0 UPA801T TYPICAL SCATTERING PARAMETERS (TA = 25°C) UPA801T VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 .967 .930 .884 .842 .801 .771 .742 .722 .706 .696 .689 .685 .681 .681 .683 .684 .684 .686 .689 .690 S21 ANG -22.9 -45.8 -67.1 -86.9 -103.1 -117.0 -130.0 -141.2 -151.1 -159.9 -167.7 -174.9 178.7 172.6 166.8 161.4 156.1 151.4 146.6 142.1 MAG S12 ANG 1.935 1.968 1.938 1.827 1.748 1.576 1.498 1.403 1.326 1.242 1.169 1.102 1.030 .979 .925 .884 .842 .804 .773 .738 159.9 143.1 129.1 117.2 106.7 97.4 89.2 81.9 75.6 69.6 64.5 59.6 55.3 50.9 47.2 43.6 40.4 37.3 34.6 32.3 MAG S22 ANG .045 .083 .108 .125 .134 .137 .137 .134 .129 .124 .118 .112 .106 .103 .100 .102 .107 .115 .127 .141 74.0 60.1 48.9 39.4 32.6 27.1 22.9 20.0 18.5 17.8 18.1 19.8 23.5 28.0 33.6 40.4 47.5 53.5 57.9 62.1 MAG ANG .978 .931 .870 .822 .779 .749 .722 .702 .690 .680 .671 .666 .660 .658 .654 .651 .651 .649 .646 .646 -9.2 -17.4 -23.2 -28.0 -31.9 -35.3 -38.4 -41.3 -44.4 -47.4 -50.4 -53.6 -56.9 -60.4 -64.0 -67.6 -71.5 -75.1 -79.2 -83.0 VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 .899 .808 .723 .660 .610 .583 .560 .547 .538 .535 .534 .533 .533 .534 .538 .542 .545 .548 .552 .556 S21 ANG -30.5 -60.0 -86.7 -106.2 -125.9 -138.6 -150.0 -159.4 -167.4 -174.4 179.3 173.4 168.3 163.2 158.7 154.3 150.0 146.1 142.0 138.3 MAG 5.578 5.327 4.877 4.341 3.883 3.388 3.046 2.741 2.498 2.287 2.111 1.965 1.830 1.721 1.620 1.544 1.464 1.396 1.336 1,280 S12 ANG 153.7 134.4 119.6 108.1 98.5 90.9 84.3 78.5 73.4 68.9 64.6 60.2 56.3 52.7 49.2 45.7 42.7 39.5 36.6 33.6 MAG .042 .069 .084 .093 .098 .102 .106 .108 .112 .116 .120 .125 .131 .139 .146 .155 .164 .174 .187 .199 S22 ANG 69.0 54.5 46.0 41.1 38.8 37.4 37.8 38.1 39.5 41.0 43.0 45.1 46.7 48.3 49.8 51.3 52.4 53.0 53.7 54.1 MAG .923 .793 .679 .604 .550 .613 .487 .468 .455 .444 .435 .429 .424 .422 .417 .414 .415 .412 .411 .411 ANG -17.3 -29.2 -36.4 -39.5 -42.0 -44.2 -45.9 -47.9 -49.9 -52.3 -54.7 57.2 -59.9 -62.8 -65.7 -68.8 -72.0 -75.3 -78.8 -82.3 UPA801T TYPICAL SCATTERING PARAMETERS (TA = 25°C) VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 .819 .701 .608 .549 .511 .494 .481 .475 .472 .471 .473 .474 .474 .477 .481 .484 .489 .490 .495 .501 S21 ANG -38.9 -73.4 -102.3 -123.6 -139.6 -151.0 -160.8 -168.6 -175.7 178.2 172.8 167.6 162.9 158.4 154.4 150.3 146.5 142.9 139.3 136.0 MAG 8.934 8.007 6.898 5.819 4.970 4.255 3.750 3.328 3.004 2.734 2.522 2.355 2.176 2..038 1.921 1.818 1.726 1.647 1.578 1.505 S12 ANG 148.0 127.6 112.6 101.8 93.5 86.9 81.4 76.3 72.0 67.7 64.0 60.2 56.7 53.2 49.8 46.7 43.9 40.6 37.6 35.0 MAG S22 ANG .038 .060 .072 .079 .086 .093 .099 .107 .113 .122 .130 .139 .148 .158 .168 .177 .190 .200 .212 .223 65.8 53.1 47.6 45.2 45.7 46.5 47.2 48.9 49.7 50.9 51.6 52.3 53.1 53.3 53.7 53.3 53.3 53.0 52.7 52.0 MAG .868 .687 .560 .483 .434 .402 .379 .361 .350 .340 .332 .328 .322 .319 .315 .313 .312 .312 .309 .309 ANG -23.6 -36.7 -42.4 -45.4 -47.2 -48.6 -49.9 -51.5 -53.4 -55.4 -57.3 59.7 -62.3 -65.2 -68.2 -70.9 -73.9 -77.2 -80.8 -84.0 VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 .750 .618 .528 .483 .459 .447 .441 .439 .437 .437 .440 .443 .444 .449 .450 .455 .459 .462 .466 .470 S21 ANG -45.7 -84.9 -114.5 -134.3 -148.5 -158.8 -167.4 -174.4 179.2 173.7 168.6 163.9 159.6 155.5 151.6 147.9 144.3 140.9 137.5 134.4 MAG 11.858 10.093 8.219 6.684 5.565 4.737 4.134 3.653 3.283 2.978 2.732 2.533 2.357 2.216 2.077 1.972 1.868 1.789 1.702 1.635 S12 ANG 144.0 122.3 107.7 97.9 90.5 84.6 79.7 75.2 71.1 67.2 63.7 60.0 66.6 53.4 50.3 47.4 44.3 41.3 38.4 36.1 ORDERING INFORMATION PART NUMBER UPA801T-T1 QUANTITY 3000 PACKAGING Tape & Reel MAG .035 .053 .054 .073 .081 .089 .098 .107 .117 .126 .136 .147 .158 .169 .180 .192 .202 .214 .226 .238 S22 ANG 63.3 53.2 50.6 50.6 50.7 52.3 53.5 54.2 54.9 55.6 55.8 55.3 55.4 55.3 54.7 64.5 53.9 53.0 52.3 51.5 MAG .816 .609 .481 .411 .365 .337 .337 .300 .290 .281 .275 .270 .267 .264 .259 .258 .256 .255 .253 .253 ANG -28.5 -41.8 -46.7 -49.1 -50.5 -51.5 -51.5 -54.2 -55.9 -57.9 -59.8 -52.3 -64.7 -67.5 -70.5 -73.3 -76.3 -79.6 -83.0 -86.4 UPA801T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1, Q2 Parameters Q1, Q2 IS 6e-16 MJC 0.55 BF 120 XCJC 0.3 NF 0.98 CJS 0 0.75 VAF 10 VJS IKF 0.08 MJS 0 ISE 32e-16 FC 0.5 NE 1.93 TF 12e-12 BR 12 XTF 6 NR 0.991 VTF 10 VAR 3.9 ITF 0.2 IKR 0.17 PTF 0 ISC 0 TR 1e-9 NC 2 EG 1.11 RE 0.38 XTB 0 RB 4.16 XTI 3 RBM 3.6 KF 1.56e-18 IRB 1.96e-4 AF 1.49 RC 2 CJE 2.8e-12 VJE 1.3 MJE 0.5 CJC 1.1e-12 VJC 0.7 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 12/98 UPA801T NONLINEAR MODEL SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 Pin_1 LC 0.07 pF 0.05 nH CCB1 C_C1E1 0.05 pF Pin_2 CCE1 0.1 pF LE LE1 0.05 nH 0.82 nH Q1 LC LB 0.6 nH 0.05 nH C_E1B2 0.1 pF LB2 C_E1C2 0.05 pF Pin_3 LB1 C_B1B2 0.05 pF LB 0.05 nH 0.6 nH CCB2 0.07 pF Pin_5 C_B2E2 0.05 pF Q2 LE2 0.65 nH 0.05 nH Pin_6 LE 0.05 nH Pin_4 0.1 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 12/98 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 9/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE