PRELIMINARY <SMALL-SIGNAL TRANSISTOR> INC6002AC1 Notice : This is not a final specification. Some parametric subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit：mm 2.8 INC6002AC1 is a silicon NPN transistor. 1.5 0.95 ・Super mini package for easy mounting. (1) (2) 0.65 1.9 2.8 FEATURE 0.95 It is designed with high voltage. 0.4 0.65 ・Hige voltage VCEO=300V (3) 0.13 0∼0.1 DC/DC convertor, High voltage switching 0.8 1.1 APPLICATION TERMINAL CONNECTER (1) BASE (2) EMITTER (3) COLLECTOR JEITA：SC-59 JEDEC：Similar toTO-236 MAXIMUM RATINGS （Ta=25℃） Symbol Parameter Ratings Unit 300 V 7 V VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEO Collector-Emitter Voltage 300 V IC Collector Current 50 mA PC Collector Dissipation 150 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55∼+150 ℃ MARKING 4W ELECTRIC CHARACTERISTICS （Ta=25℃） Symbol Parameter Test conditions Limits Min Typ Max Unit V(BR)CBO Collector-Base Breakdown Voltage IC=50µA，IE=0 300 - - V V(BR)EBO Emitter-Base Breakdown Voltage IE=50µA，IC=0 5 - - V V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA，RBE=∞ 300 - - V Collector Cutoff Current VCB=300V，IE=0 - - 0.5 µA µA ICBO IEBO Emitter Cutoff Current VEB=5V，IC=0 - - 0.5 hFE DC Forward Current Gain VCE=10V，IC=1mA 50 - 305 - Collector-Emitter Saturation Voltage IC=10mA，IB=1mA - - 1.0 V Gain Bandwidth Product VCE=10V，IE=-10mA - 50 - MHz Collector Output Capacitance VCB=6V，IE=0，f=1MHz - 1.9 - pF VCE(sat) fT Cob ISAHAYA ELECTRONICS CORPORATION PRELIMINARY <SMALL-SIGNAL TRANSISTOR> INC6002AC1 Notice : This is not a final specification. Some parametric subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR TYPCAL CHARACTERISTICS Common Emitter Output 50 Common Emitter Transfer 100 Ta=25℃ Collector Current : IC (mA) 40 0.8mA 30 0.6mA 0.4mA 20 0.2mA 0.1mA Ta=25℃ VCE=10V Collector Current : IC (mA) 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 10 Ta=125℃ 75℃ 25℃ -25℃ 1 10 IB=0.05mA 0 0.1 0 2 4 6 8 10 0 Collector-Emitter Voltage : VCE (V) 0.2 0.4 hFE-IC 1 VCE(sat)-IC Ta=25℃ IC/IB=10 Ta=25℃ VCE=10V Ta=125℃ 75℃ Collector-Emitter Saturation Voltage : VCE(sat) (V) DC Forward Current Gain : hFE 0.8 10 1000 100 25℃ -25℃ 10 1 Ta=125℃ 75℃ 0.1 25℃ -25℃ 0.01 1 0.1 1 10 0.1 100 1 10 100 Collector Current : IC (mA) Collector Current : IC (mA) fT-IE Cob-VCB 100 100 Ta=25℃ Ta=25℃ Collector Output Capacitance : Cob (pF) Gain Bandwidth Product : fT (MHz) 0.6 Base-Emitter Voltage : VBE (V) VCE=30V 10V 6V 10 10 1 1 -1 -10 Emitter Current : IE (mA) -100 0.1 1 10 Collector-Base Voltage : VCB (V) ISAHAYA ELECTRONICS CORPORATION 100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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