DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials contribute excellent DC, AC performance. Thus, this process is utilized for 1 V voltage IC. FEATURES • 1 V supply voltage: VCC = 0.9 V to 2.0 V • Low noise figure: 2.3 dBTYP. @ fin = 150 MHz (with external matching circuit to optimize NF) • Low current consumption: ICC = 0.5 mATYP. @ VCC = 1.0 V • Gain available frequency: fRF = 150 MHz to 330 MHz (with external matching circuit) • High-density surface mounting: 6 pin mini mold ORDERING INFORMATION PART NUMBER µPC8102T-E3 PACKAGE 6 pin mini mold MARKING SUPPLYING FORM C2B Embossed tape 8 mm wide. Pin 1, 2, 3 face to perforation side of tape. QTY 3 kp/Reel * For evaluation sample order, please contact your local NEC sales office. (Order number: µPC8102T). PIN CONNECTIONS 3 2 1 C2B (Top View) (Bottom View) 4 4 3 5 5 2 6 6 1 1: 2: 3: 4: 5: 6: INPUT GND OUTPUT VCC C1 C2 Caution Electro-static sensitive devices Document No. P11501EJ2V0DS00 (Previous No. ID-3534) Date Published May 1996 P Printed in Japan © 1996 µPC8102T INTERNAL BLOCK DIAGRAM 3 4 2 5 1 6 SYSTEM APPLICATION EXAMPLE AS PAGER 150 MHz to 330 MHz µ PC8102T µ PC8103T BPF BPF IF 2 µPC8102T PIN EXPLANATION PIN NO. NAME SUPPLY VOLTAGE (V) PIN VOLTAGE (V) 1 INPUT — 0.75 RF signal input pin. This pin should be externally equipped with matching circuit in accordance with desired frequency. 2 GND 0 — This ground pin must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. Track length should be kept as short as possible. 3 OUTPUT C2 pin voltage must be applied through external matching inductor — FUNCTION AND APPLICATION Amplified signal output pin. This pin should be externally equipped with matching circuit in accordance with desired frequency. 4 VCC 0.9 to 2.0 — Supply voltage pin. Connect bypass capacitor (eg 1000 pF) to minimize ground impedance. 5 C1 — 0.88 Ground with capacitance pin (eg 1000 pF). 6 C2 — 0.85 AC ground pin for output Note EQUIVALENT CIRCUIT 3 1 2 6 5 4 Pin voltage values are described at VCC = 1 V. 3 µPC8102T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL CONDITION RATINGS UNIT Supply Voltage VCC TA = +25 ˚C 2.2 V Power Dissipation PD Mounted on 50 × 50 × 1.6 mm double copper clad epoxy glass PWB at TA = +85 ˚C 280 mW Operating Temperature Topt –40 to +85 ˚C Storage Temperature Tstg –55 to +150 ˚C RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VCC 0.9 1.0 2.0 V Operating Temperature Topt –40 +25 +85 ˚C Operating Frequency fopt 150 330 MHz Electric characteristic (TA = +25 ˚C, VCC = 1.0 V, ZS = ZL = 50 Ω) PARAMETER SYMBOL µPC8102T TEST CONDITIONS UNIT MIN. TYP. MAX. Circuit Current ICC No input signal, TEST CIRCUIT 1 0.30 0.5 0.65 mA Power Gain GP f = 280 MHz, TEST CIRCUIT 3 10.0 13.5 16.5 dB Output 3rd order intercept point OIP3 f1 = 150.000 MHz, f2 = 150.025 MHz TEST CIRCUIT 2 — –5 — dBm Note External matching circuits should be attached to input and output pins. Standared characteristics for reference (Sample: ICC = 0.55 mA, Condition: TA = +25 ˚C, VCC = 1.0 V) PARAMETER SYMBOL CONDITIONS Reference value UNIT 20.6 dB 3.6 dB 14.7 dB 4.0 dB 14.5 dB 4.1 dB 19.4 dB 2.3 dB 14.0 dB 2.9 dB 11.6 dB 3.1 dB matched with 50 Ω Power Gain 1 GP 1 Noise Figure 1 NF1 Power Gain 2 GP 2 Noise Figure 2 NF2 Power Gain 3 GP 3 Noise Figure 3 NF3 f = 150 MHz, TEST CIRCUIT 2 f = 280 MHz, TEST CIRCUIT 3 f = 330 MHz, TEST CIRCUIT 5 matched to optimize NF 4 Power Gain 4 GP 4 Noise Figure 4 NF4 Power Gain 5 GP 5 Noise Figure 5 NF5 Power Gain 6 GP 6 Noise Figure 6 NF6 f = 150 MHz, TEST CIRCUIT 2 f = 280 MHz, TEST CIRCUIT 4 f = 330 MHz, TEST CIRCUIT 6 µPC8102T TEST CIRCUIT 1 1 2 3 IN GND OUT C2 C1 VCC 6 5 4 A 5 µPC8102T TEST CIRCUIT 2 (150 MHz) <Matched with 50 Ω or matched to optimize NF> 7.5 pF (Note) 7.5 pF (Note) 1 2 3 IN GND OUT C2 C1 VCC 6 5 4 84 nH 10 pF 68 nH 1 000 pF 1 000 pF 1 000 pF 1 000 pF Note 10 pF 47 kΩ Matching can be adjusted with trimmer condenser. ILLUSTRATION OF THE TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD 1 000 pF 10 pF OUT 47k Ω 1 000 pF 3 2 VCC 1 C2B 84 nH 7.5pF 4 5 6 Mounting direction 10 pF 1 000 pF 1 000 pF 7.5pF IN 1 000 pF 68 nH 8102/07 Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Back side: GND pattern (*3) Solder plated on pattern (*4) 6 : Through holes µPC8102T TEST CIRCUIT 3 (280 MHz) <Matched with 50 Ω> 0.5 pF 2 pF 5 pF 23 nH 2 pF 0.5 pF 23 nH 1 2 3 IN GND OUT 10 pF 47 kΩ 1 000 pF 1 000 pF C2 C1 VCC 6 5 4 1 000 pF 1 000 pF ILLUSTRATION OF THE TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD OUT 3 2 VCC 1 1 000 pF IN C2B 1 000 pF 4 5 6 Mounting direction µ PC8102/07 TYPE2 2 pF OUT 47 kΩ 1 000 pF 10 pF 23 nH 2 pF 0.5 pF 1 000 pF 23 nH IN 0.5 pF 5 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes 7 µPC8102T TEST CIRCUIT 4 (280 MHz) <Matched to optimize NF> 2 pF 10 pF 27 nH 2 pF 23 nH 1 2 3 IN GND OUT 10 pF 47 kΩ 1 000 pF 1 000 pF C2 C1 VCC 6 5 4 1 000 pF 1 000 pF ILLUSTRATION OF THE TEST CIRCUIT 4 ASSEMBLED ON EVALUATION BOARD OUT 3 2 VCC 1 1 000 pF IN C2B 1 000 pF 4 5 6 Mounting direction µ PC8102/07 TYPE2 2 pF OUT 47 kΩ 1 000 pF 10 pF 23 nH 2 pF 0.5 pF 1 000 pF 27 nH IN 10 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) 8 : Through holes µPC8102T TEST CIRCUIT 5 (330 MHz) <Matched with 50 Ω> 6 pF 17 nH 1.5 pF 3 pF 1 2 3 IN GND OUT 5 pF 47 kΩ 23 nH 1 000 pF 1 000 pF C2 C1 VCC 6 5 4 1 000 pF 1 000 pF ILLUSTRATION ON THE TEST CIRCUIT 5 ASSEMBLED ON EVALUATION BOARD OUT 3 2 VCC 1 1 000 pF IN C2B 1 000 pF 4 5 6 Mounting direction µ PC8102/07 TYPE2 1.5 pF OUT 5 pF 23 nH 3 pF 47 kΩ 1 000 pF 17 nH 1 000 pF IN 6 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) : Through holes 9 µPC8102T TEST CIRCUIT 6 (330 MHz) <Matched to optimize NF> 10 pF 23 nH 2 pF 3 pF 1 2 3 IN GND OUT 6 pF 47 kΩ 23 nH 1 000 pF 1 000 pF C2 C1 VCC 6 5 4 1 000 pF 1 000 pF ILLUSTRATION ON THE TEST CIRCUIT 6 ASSEMBLED ON EVALUATION BOARD OUT 3 2 VCC 1 1 000 pF IN C2B 1 000 pF 4 5 6 Mounting direction µ PC8102/07 TYPE2 2 pF OUT 6 pF 23 nH 3 pF 47 kΩ 1 000 pF 1 000 pF 23 nH IN 10 pF Note (*1) 35 × 42 × 0.4 mm double copper clad polyimide board (*2) Solder plated on pattern (*3) 10 : Through holes µPC8102T CHARACTERISTICS (TA = +25 ˚C unless otherwise specified) – TEST CIRCUIT 1 – CIRCUIT CURRENT vs. SUPPLY VOLTAGE ICC - CURCUIT CURRENT - mA 5 4 TA = +85˚C 3 TA = +25˚C 2 TA = –40˚C 1 0 0.5 1.0 1.5 2.0 2.5 VCC - SUPPLY VOLTAGE - V – TEST CIRCUIT 2 (matched with 50 Ω) – 150 MHz CH1 S11 C2 1 U FS 1: Ω 54.377 –5.166 205.30 nH Ω 150.000 000 MHz VCC = 1.0 V CH1 S12 ICC = 0.55 mA MAG 10 dB/ NF = 3.55 dB REF 0 dB 1: –41.406 dB 150.000 000 MHz C2 MARKER 1 150 MHz log , MARKER 1 150 MHz 1 1 CENTER CH1 O21 log 150.000 000 MHz MAG 10 dB/ SPAN REF 0 dB CENTER 200.000 000 MHz 1: 20.543 dB CH1 S22 150.000 000 MHz 1 U FS 1: SPAN 47.934 Ω 150.000 000 MHz C2 MARKER 1 150 MHz 200.000 000 MHz 0.7613 Ω 826.93 pH 150.000 000 MHz C2 MARKER 1 150 MHz 1 1 CENTER 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz 11 µPC8102T – TEST CIRCUIT 2 (matched to optimize NF) – 150 MHz CH1 S11 1 U FS 1: Ω 76.062 73.316 77.791 nH Ω 150.000 000 MHz VCC = 1.0 V log CH1 S12 , ICC = 0.55 mA MAG 10 dB/ NF = 2.25 dB REF 0 dB 1: –43.251 dB 150.000 000 MHz C2 C2 1 1 CENTER CH1 S21 log 150.000 000 MHz MAG 10 dB/ SPAN REF 0 dB CENTER 200.000 000 MHz 1: 19.418 dB CH1 S22 150.000 000 MHz 1 U FS 1: 53.445 SPAN Ω 150.000 000 MHz C2 200.000 000 MHz – 1.0137 Ω 1.0467 nF 150.000 000 MHz C2 1 1 CENTER 12 150.000 000 MHz SPAN 200.000 000 MHz CENTER 150.000 000 MHz SPAN 200.000 000 MHz µPC8102T – TEST CIRCUIT 3 (matched with 50 Ω) – 280 MHz CH1 S11 1 U FS 1: Ω 84.699 VCC = 1.0 V –2.8789 Ω 197.44 pF 280.000 000 MHz CH1 S12 log , MAG ICC = 0.55 mA 10 dB/ NF = 4.0 dB REF 0 dB 1: –32.145 dB 260.000 000 MHz C2 De1 C2 De1 1 1 CENTER CH1 S21 log 280.000 000 MHz MAG 10 dB/ SPAN REF 0 dB CENTER 200.000 000 MHz 1: 14.748 dB CH1 S22 260.000 000 MHz 1 U FS 1: SPAN Ω 51.172 4.5469 280.000 000 MHz 200.000 000 MHz 2.5845 nH Ω 280.000 000 MHz C2 De1 C2 De1 1 1 CENTER 280.000 000 MHz SPAN 200.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz 13 µPC8102T – TEST CIRCUIT 4 (matched to optimize NF) – VCC = 1.0 V 280 MHz CH1 S11 1 U FS 1: Ω 81.02 75.09 , 42.682 nH Ω 280.000 000 MHz CH1 S12 NF = 2.93 dB TA = 25 ˚C ICC = 0.55 mA log MAG 10 dB/ REF 0 dB 1: –33.561 dB 280.000 000 MHz C2 De1 C2 De1 1 1 CENTER CH1 S21 log 280.000 000 MHz MAG 10 dB/ SPAN REF 0 dB 200.000 000 MHz 1: 14.087 dB CENTER CH1 S22 280.000 000 MHz 1 U FS 1: SPAN 56.415 280.000 000 MHz Ω 200.000 000 MHz –6.4043 Ω 67.633 pF 280.000 000 MHz C2 De1 C2 De1 1 1 CENTER 14 280.000 000 MHz SPAN 200.000 000 MHz CENTER 280.000 000 MHz SPAN 200.000 000 MHz µPC8102T – TEST CIRCUIT 5 (matched with 50 Ω) – 330 MHz CH1 S11 1 U FS 1: Ω 57.111 VCC = 1.0 V 11.426 5.5105 nH Ω 330.000 000 MHz , ICC = 0.55 mA CH1 S12 NF = 4.1 dB log MAG 10 dB/ REF 0 dB 1: –30.38 dB 330.000 000 MHz C2 C2 De1 1 1 CENTER CH1 S21 log 330.000 000 MHz MAG 10 dB/ SPAN REF 0 dB 200.000 000 MHz 1: 14.479 dB CENTER CH1 S22 330.000 000 MHz 1 U FS 1: SPAN 60.922 Ω 330.000 000 MHz 200.000 000 MHz – 91.797 Ω 5.2539 nF 330.000 000 MHz C2 De1 C2 De1 1 1 CENTER 330.000 000 MHz SPAN 200.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz 15 µPC8102T – TEST CIRCUIT 6 (matched to optimize NF) – 330 MHz CH1 S11 1 U FS 1: 157.77 Ω VCC = 1.00 V –17.273 Ω 27.921 pF 330.000 000 MHz CH1 S12 log , MAG ICC = 0.55 mA 10 dB/ NF = 3.14 dB REF 0 dB 1: –30.649 dB 330.000 000 MHz C2 De1 C2 De1 1 1 CENTER CH1 S21 log 330.000 000 MHz MAG 10 dB/ SPAN REF 0 dB 200.000 000 MHz 1: 11.58 dB CENTER CH1 S22 330.000 000 MHz 1 U FS 1: SPAN 47.793 330.000 000 MHz C2 De1 Ω 200.000 000 MHz –6.7441 Ω 71.512 pF 330.000 000 MHz C2 De1 1 1 CENTER 16 330.000 000 MHz SPAN 200.000 000 MHz CENTER 330.000 000 MHz SPAN 200.000 000 MHz µPC8102T – TEST CIRCUIT 2 – IM3 AND OUTPUT LEVEL vs. INPUT LEVEL (150 MHz) +10 0 –20 Output level Pout [dBm] 3rd order intermodulation distortion IM3 (dBm) –10 POUT –30 –40 IM3 –50 –60 –70 –80 –70 –60 –50 –40 –30 –20 –10 INPUT LEVEL Pin [dBm] 17 µPC8102T 6 PIN MINI MOLD PACKAGE DIMENSIONS (Unit: mm) 0.13 ±0.1 +0.1 0.3 –0.05 2 3 +0.2 1.5 –0.1 +0.2 2.8 –0.3 1 0 to 0.1 6 5 4 0.95 0.95 1.9 2.9 ±0.2 18 0.8 +0.2 1.1 –0.1 µPC8102T NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) The bypass capacitor (eg 1 000 pF) should be attached to the VCC pin. (5) The matching circuit must be each attached to input and output pins. RECOMMENDED SOLDERING CONDITIONS This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives. µPC8102T Soldering process Soldering conditions Recommended condition symbol Infrared ray reflow Package peak temperature: 235 ˚C, Hour: within 30 s. (more than 210 ˚C), Time: 3 time, Limited days: no.* IR35-00-3 VPS Package peak temperature: 215 ˚C, Hour: within 40 s. (more than 200 ˚C), Time: 3 time, Limited days: no.* VP15-00-3 Soldering tub temperature: less than 260 ˚C, Hour: within 10 s. WS60-00-1 Wave Soldering Time: 1 time, Limited days: no.* Pin part heating Pin area temperature: less than 300 ˚C, Hour: within 3 s/pin. Limited days: no.* * It is the storage days after opening a dry pack, the storage conditions are 25 ˚C, less than 65 % RH. Note The combined use of soldering method is to be avoided (However, except the pin area heating method). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535EJ7V0IF00). 19 µPC8102T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 20