A-POWER AP9973GP

AP9973GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Low Gate Charge
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Surface Mount Package
BVDSS
60V
RDS(ON)
80mΩ
ID
14A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9973GP) are available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current, VGS @ 10V
14
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
9
A
1
IDM
Pulsed Drain Current
40
A
[email protected]=25℃
Total Power Dissipation
27
W
Linear Derating Factor
0.22
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200314072-1/4
AP9973GS/P
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.05
-
V/℃
VGS=10V, ID=9A
-
-
80
mΩ
VGS=4.5V, ID=6A
-
-
100
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=9A
-
8.6
-
S
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=9A
-
8
13
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=30V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=9A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=3.3Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
720
1150
pF
Coss
Output Capacitance
VDS=25V
-
77
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=14A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
AP9973GS/P
45
32
o
T C =25 C
ID , Drain Current (A)
35
30
24
25
20
15
10
20
16
12
V G =3.0V
8
V G =3.0V
4
5
0
0
0
1
2
3
4
5
0
6
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
2.5
I D =9A
ID=9A
o
T C =25 C
V G =10V
2.0
Normalized RDS(ON)
85
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
T C =150 o C
28
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
40
80
75
1.5
1.0
0.5
70
0.0
65
3
5
7
9
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
14
12
2
IS(A)
8
VGS(th) (V)
10
T j =25 o C
o
T j =150 C
6
1.5
1
4
2.01E+08
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9973GS/P
f=1.0MHz
10000
12
V DS =48V
V DS =38V
V DS =30V
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
ID=9A
10
6
4
100
C oss
C rss
2
0
10
0
4
8
12
16
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
1ms
ID (A)
10
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4