AP9971GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Fast Switching Performance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Full Isolation Package
BVDSS
60V
RDS(ON)
36mΩ
ID
23A
G
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
23
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
14
A
80
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data and specifications subject to change without notice
200712071-1/4
AP9971GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=18A
-
-
36
mΩ
VGS=4.5V, ID=12A
-
-
50
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=18A
-
17
-
S
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=18A
-
18
30
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
VDS=30V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
24
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
26
-
ns
tf
Fall Time
RD=1.67Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700 2700
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Min.
Typ.
IS=25A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9971GI
100
70
o
T C =25 C
60
10V
7.0V
50
5.0V
o
T C =150 C
10V
7.0V
5.0V
60
ID , Drain Current (A)
ID , Drain Current (A)
80
4.5V
40
4.5V
40
30
20
V G =3.0V
20
V G =3.0V
10
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
2.5
I D =18A
V G =10V
I D = 18 A
T C =25 o C
Normalized RDS(ON)
2.0
RDS(ON) (mΩ)
35
30
1.5
1.0
0.5
0.31
trr
0.0
25
3
5
7
9
11
-50
0
50
100
o
V GS , Gate-to-Source Voltage (V)
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
20
2.5
16
T j =25 o C
o
T j =150 C
2
IS(A)
VGS(th) (V)
12
8
1.5
1
4
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9971GI
f=1.0MHz
14
10000
I D =18A
V DS =30V
V DS =38V
V DS =48V
10
8
C iss
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
1ms
10ms
100ms
1s
DC
1
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.31
trr
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.01
0.1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
Qrr
1
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.50
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00 10.40
L3
2.91
3.41
L4
14.70 15.40 16.10
φ
e
L3
b1
A1
b
c
----
3.20
----
----
2.54
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220CFM
9971GI
3.91
Part Number
meet RoHS requirement
Package Code
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence