AP18T10GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Fast Switching Performance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
BVDSS
100V
RDS(ON)
160mΩ
ID
▼ Full Isolation Package
9A
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220CFM(I)
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
Absolute Maximum Ratings
Parameter
Rating
Units
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
9
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
5.6
A
Symbol
VDS
1
IDM
Pulsed Drain Current
30
A
PD@TC=25℃
Total Power Dissipation
28
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
200903052
AP18T10GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
100
-
-
V
VGS=10V, ID=5A
-
-
160
mΩ
VGS=0V, ID=250uA
2
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5.6
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (T j=125 C) VDS=80V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
10
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=80V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.5
-
nC
VDS=50V
-
6.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
13
-
ns
tf
Fall Time
RD=10Ω
-
3.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
425
680
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
33
-
pF
Min.
Typ.
IS=8A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
53
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
130
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP18T10GI
20
20
10V
7.0V
o
T C =25 C
16
ID , Drain Current (A)
16
ID , Drain Current (A)
10V
9.0V
8.0V
7.0V
o
T C =150 C
12
6.0V
8
12
8
V G =5.0V
5.0V
4
4
V G =4.5V
0
0
0
2
4
6
8
0
4
V DS , Drain-to-Source Voltage (V)
8
12
16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.8
ID=5A
T C =25 o C
I D =5A
V G =10V
2.4
Normalized RDS(ON)
RDS(ON) (mΩ)
260
220
180
2.0
1.6
1.2
140
0.8
4
5
6
7
8
9
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
o
Qrr
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
3.2
8
2.8
T j =25 o C
VGS(th) (V)
T j =150 o C
trr
0.31
0.4
100
IS(A)
6
2.4
4
2
2
1.6
0
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP18T10GI
f=1.0MHz
14
10000
ID=5A
10
1000
V DS =80V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
100
4
C oss
C rss
2
0
10
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
ID (A)
10
1ms
10ms
100ms
1s
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
trr
0.31
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
Qrr
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4