A-POWER AP20T03GT-HF

AP20T03GT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
50mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
3.2A
S
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
G
The TO-92
applications.
package
is
widely used
for
all commercial-industrial
TO-92
D
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current
3.2
A
[email protected]=70℃
Continuous Drain Current
2.6
A
12
A
0.83
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Units
Maximum Thermal Resistance, Junction-ambient
150
℃/W
Data and specifications subject to change without notice
1
201301081
AP20T03GT-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=3A
-
-
50
mΩ
VGS=4.5V, ID=2A
-
-
80
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
4
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
4
6.4
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
4
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
14
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
480
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=0.69A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20T03GT-HF
16
20
10V
7 .0V
5 .0V
ID , Drain Current (A)
16
10V
7.0V
5.0V
T A =150 o C
ID , Drain Current (A)
T A = 25 o C
4.5 V
12
8
12
4.5V
8
4
4
V G = 3. 0 V
V G = 3.0V
0
0
0
1
2
3
4
0
Fig 1. Typical Output Characteristics
3
4
2.0
ID=3A
V G = 10V
ID=2A
o
T A =25 C
65
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
2
Fig 2. Typical Output Characteristics
75
55
1.2
0.8
45
0.4
35
2
4
6
8
-50
10
0
50
100
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
8
1.6
Normalized VGS(th)
IS(A)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
6
T j =150 o C
T j =25 o C
4
150
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP20T03GT-HF
f=1.0MHz
400
V DS = 15 V
ID= 3A
6
300
C (pF)
VGS , Gate to Source Voltage (V)
8
4
C iss
200
100
2
C oss
C rss
0
0
0
2
4
6
1
8
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
RDS(ON)
100us
1
1ms
0
10ms
100ms
1s
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja = 150 oC/W
Single Pulse
0.01
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4