AP2430GN3-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Bottom Exposed DFN
BVDSS
30V
▼ Low On-resistance
RDS(ON)
12mΩ
▼ Small Size & Lower Profile
ID
13A
▼ RoHS Compliant & Halogen-Free
D2
D1
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
G2
G1
S2
S1
The DFN 3x3 package is well suited for low current DC/DC
applications.
D1
D1
D2
D2
D2
D1
S1
G1
S2
G2
DFN 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
+20
V
3
13
A
3
10.4
A
30
A
3.1
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Rating
Units
40
℃/W
1
201208212
AP2430GN3-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
9.7
12
mΩ
VGS=4.5V, ID=6A
-
14.4
18
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
VDS=10V, ID=8A
-
15
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
28
-
ns
tf
Fall Time
VGS=10V
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
1080 1720
pF
Coss
Output Capacitance
VDS=15V
-
195
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
f=1.0MHz
0.85
1.7
3.4
Ω
Source-Drain Diode
Min.
Typ.
VSD
Symbol
Forward On Voltage2
Parameter
IS=10A, VGS=0V
Test Conditions
-
-
Max. Units
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <5sec ; 100 C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2430GN3-HF
50
30
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
40
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
ID , Drain Current (A)
o
T A =25 C
30
20
20
10
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
18
I D =8A
V G =10V
I D =6A
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
16
14
12
1.6
1.2
0.8
10
0.4
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I D =250uA
10
Normalized VGS(th) (V)
1.6
IS(A)
8
T j =150 o C
T j =25 o C
6
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2430GN3-HF
10
f=1.0MHz
1600
8
1200
C iss
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
V DS =15V
800
4
400
2
C oss
C rss
0
0
0
8
16
24
1
32
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=100 oC/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
16
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
40
30
20
8
4
T j =150 o C
10
12
o
T j =25 C
T j =-40 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4