A-POWER AP1334GEU-HF

AP1334GEU-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Capable of 1.8V Gate Drive
▼ Optimal DC/DC Battery Application
S
▼ Halogen Free & RoHS Compliant Product
SOT-323
BVDSS
20V
RDS(ON)
50mΩ
ID
2.1A
G
D
Description
G
AP1334 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
+8
V
Continuous Drain Current
3
2.1
A
Continuous Drain Current
3
1.7
A
8
A
0.35
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
360
℃/W
1
201305061
AP1334GEU-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=2A
-
40
50
mΩ
VGS=2.5V, ID=1.5A
-
44
60
mΩ
VGS=1.8V, ID=1A
-
50
70
mΩ
0.3
0.5
1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=2A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=2A
-
9
14.4
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=5V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
912
pF
Coss
Output Capacitance
VDS=10V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.4
4.8
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1334GEU-HF
10
10
ID , Drain Current (A)
8
6
4
8
2
6
4
2
0
0
0
1
1
2
2
3
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
60
ID=2A
V G = 4.5 V
ID=1A
T A =25 ℃
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
5.0V
4.5V
3.5V
2.5V
V G =1.8V
o
T A = 150 C
ID , Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V G =1.8V
T A =25 o C
50
1.2
1.0
40
0.8
0.6
30
1
2
3
4
-50
5
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
I D =250uA
T j =150 o C
2
Normalized VGS(th)
IS(A)
3
T j =25 o C
1
1.5
1.0
0.5
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1334GEU-HF
6
f=1.0MHz
800
ID=6A
V DS = 10 V
C iss
600
4
C (pF)
VGS , Gate to Source Voltage (V)
5
3
400
2
200
1
0
C rss
C oss
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
10
Operation in this
area limited by
RDS(ON)
100us
1ms
ID (A)
1
10ms
0.1
100ms
1s
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja=450℃/W
DC
Single Pulse
0.01
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
4
V DS =5V
T j =25 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
T j =-40 o C
o
T j =150 C
20
10
3
2
1
0
0
0
1
2
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
3
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4