A-POWER AP4455GYT-HF

AP4455GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
D
G
BVDSS
RDS(ON)
ID
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
-30V
21mΩ
-10.6A
D
D
D
S
S
S
G
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-30
V
+20
V
3
-10.6
A
3
-8.5
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-40
A
[email protected]=25℃
Total Power Dissipation
3.57
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
5
℃/W
35
℃/W
1
201108262
AP4455GYT-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-8A
-
15
21
mΩ
VGS=-4.5V, ID=-5A
-
21.3
36
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.6
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-8A
-
19
30
nC
Qgs
Gate-Source Charge
VDS=-15V
-
4.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
60
-
ns
tf
Fall Time
VGS=-10V
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700 2720
pF
Coss
Output Capacitance
VDS=-15V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Rg
Gate Resistance
f=1.0MHz
3
6
12
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-2.9A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 85oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4455GYT-HF
80
100
T A =25 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
T A = 150 o C
60
40
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
60
40
20
20
0
0
0
2
4
6
8
10
0
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
25
1.6
I D =-8A
V G =-10V
I D = -5 A
T A =25 ℃
23
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
21
19
17
1.2
1.0
0.8
15
13
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
2.0
I D = -250uA
10
Normalized -VGS(th) (V)
1.6
-IS(A)
8
T j =150 o C
T j =25 o C
6
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4455GYT-HF
f=1.0MHz
2400
10
I D = -8 A
2000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -15 V
8
6
1600
1200
4
800
2
C oss
C rss
400
0
0
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
Normalized Thermal Response (Rthja)
100
100us
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthia=85 ℃/W
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
50
V DS = -5V
-ID , Drain Current (A)
-ID , Drain Current (A)
40
30
20
12
8
4
T j =150 o C
o
T j =25 C
10
T j = -40 o C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4