A-POWER AP2R803AGMT-HF

AP2R803AGMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
BVDSS
30V
RDS(ON)
3mΩ
ID
105A
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
D
D
D
S
S
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+12
V
[email protected]=25℃
Continuous Drain Current (Chip), V GS @ 10V
[email protected]=25℃
[email protected]=70℃
105
A
3
33
A
3
26.5
A
240
A
50
W
5
W
45
mJ
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
[email protected]=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
Units
2.5
℃/W
25
℃/W
1
201103021
AP2R803AGMT-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=20A
-
-
3
mΩ
VGS=4.5V, ID=20A
-
-
4.2
mΩ
0.8
-
2.5
V
-
85
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=20A
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
ID=20A
-
28
45
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
5.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
13
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=10A
-
32
-
ns
td(off)
Turn-off Delay Time
RG=2Ω
-
38
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
3000 4800
pF
Coss
Output Capacitance
VDS=15V
-
700
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
290
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
45
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec
o
4.Starting Tj=25 C , VDD=25V , L=0.1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2R803AGMT-HF
240
160
10V
7.0V
6.0V
5.0V
V G = 4.0 V
ID , Drain Current (A)
200
160
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
120
80
120
80
40
40
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
V DS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
4
I D =20A
I D =20A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
3.6
3.2
2.8
1.6
1.2
0.8
2.4
0.4
2
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
40
I D =250uA
1.6
T j =150 o C
Normalized VGS(th) (V)
IS(A)
30
T j =25 o C
20
1.2
0.8
10
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2R803AGMT-HF
10
f=1.0MHz
4000
8
3000
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
V DS =15V
C iss
2000
4
1000
2
C oss
C rss
0
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
1ms
10
10ms
100ms
DC
o
T C =25 C
Single Pulse
1
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
Single Pulse
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
V DS =5V
VG
ID , Drain Current (A)
120
QG
4.5V
80
QGS
QGD
40
T j =150 o C o
T j =25 C
T j =-40 o C
Charge
Q
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4