AP4434GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
20V
RDS(ON)
18.5mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
21A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 4.5V
21
A
ID@TC=100℃
Continuous Drain Current, VGS @ 4.5V
13
A
80
A
12.5
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
10
℃/W
62.5
℃/W
1
201107051
AP4434GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
20
-
-
V
VGS=4.5V, ID=12A
-
-
18.5
mΩ
VGS=2.5V, ID=8A
-
-
30
mΩ
0.3
-
1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=12A
-
29
-
S
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=12A
-
9.5
15
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
11
-
ns
tr
Rise Time
ID=12A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=5V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
575
920
pF
Coss
Output Capacitance
VDS=20V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
3.4
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=12A, VGS=0V
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4434GH-HF
80
60
5.0V
4.5V
3.5V
50
ID , Drain Current (A)
T C =25 C
ID , Drain Current (A)
o
T C = 150 C
5.0V
4.5V
3.5V
o
60
40
2.5V
V G =1.8V
40
2.5V
30
20
V G =1.8V
20
10
0
0
0
2
4
6
8
0
10
V DS , Drain-to-Source Voltage (V)
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
30
I D =12A
V G =4.5V
I D =8A
T C =25 ℃
26
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
22
18
1.2
0.8
14
0.4
10
0
2
4
-50
6
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.8
I D =1mA
T j =150 o C
Normalized VGS(th) (V)
IS(A)
6
T j =25 o C
4
1.2
0.6
2
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4434GH-HF
f=1.0MHz
8
1200
I D = 12 A
V DS =16V
1000
6
800
C (pF)
VGS , Gate to Source Voltage (V)
7
5
4
600
C iss
3
400
2
200
C oss
C rss
1
0
0
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
1
Normalized Thermal Response (R thjc)
100
Operation in this area
limited by RDS(ON)
10
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
24
V DS =5V
T j =-40 o C
T j =25 o C
40
20
o
ID , Drain Current (A)
ID , Drain Current (A)
13
Fig 8. Typical Capacitance Characteristics
1000
ID (A)
9
V DS , Drain-to-Source Voltage (V)
T j =150 C
30
20
16
12
8
10
4
0
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
5
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4