COMSET 2N3789_12

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in
Jedec TO-3 metal case. They are inteded for use in power linear and switching applications.
The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
Ratings
Collector-BaseVoltage
Collector-Emitter
Voltage
IE = 0
IB = 0
VEBO
IC
IB
Emitter-Base Voltage
Collector Current
Base Current
PD
Total Device Dissipation @ TC = 25°
TJ
TS
Junction Temperature
Storage Temperature
Value
2N3789
2N3791
2N3790
2N3792
2N3789
2N3791
2N3790
2N3792
IC = 0
Unit
-80
V
-100
-60
V
-80
-7
-10
-4
V
A
A
150
W
-65 to +200
°C
Value
Unit
1.17
°C/W
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case (Max)
05/11/2012
COMSET SEMICONDUCTORS
1|4
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(BR)
VCEO(SUS)
ICEO
ICEV
IEBO
hFE
VCE(SAT)
Ratings
Test Condition(s)
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Sustaining Voltage (*)
Collector-Emitter
Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*) (**)
Collector-Emitter
saturation Voltage (*)
(**)
05/11/2012
2N3789
2N3791
IC=-200 mA, IB=0 (*)
2N3790
2N3792
2N3789
2N3791
IC=-200 mA, IB=0 (*)
2N3790
2N3792
2N3789
VCE=-30 V, IB=0
2N3791
2N3790
VCE=-40 V, IB=0
2N3792
2N3789
VCE=-80 V, VEB=1.5 V
2N3791
2N3790
VCE=-100 V, VEB=1.5 V
2N3792
VCE=-60 V, VEB=1.5 V 2N3789
TC = 150°C
2N3791
VCE=-80 V, VEB=1.5 V 2N3790
TC = 150°C
2N3792
2N3713
2N3714
VBE=-7 V, IC=0
2N3715
2N3716
2N3789
2N3790
IC=-1 A, VCE=-2 V
2N3791
2N3792
2N3789
2N3790
IC=-3 A, VCE=-2 V
2N3791
2N3792
2N3789
2N3790
IC=-10 A, VCE=-4 V
2N3791
2N3792
2N3791
IC=-5 A, IB=-0.5 A
2N3792
COMSET SEMICONDUCTORS
Min
Typ
Max
-60
-
-
Unit
V
-80
-
-
-60
-
-
-80
-
-
-
-
-0.7
-
-
-0.7
-
-
-1
-
-
-1
-
-
-10
-
-
-10
-
-
-5
25
-
90
50
-
150
15
-
-
30
-
-
5
-
-
-
-
-1
V
mA
mA
mA
-
2|4
V
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VBE(SAT)
VBE
Ratings
Test Condition(s)
Base-Emitter saturation
Voltage (*) (**)
IC=-5 A, IB=-0.5 A
Base-Emitter Voltage (*)
IC=-3 A, VCE=-2V
(**)
VCE=-10 V, IC=-0.5 A
f=1.0 kHz
hfe
Small Signal Current
Gain
VCE=-10 V, IC=-0.5 A
f=1.0 MHz
2N3789
2N3790
2N3791
2N3792
2N3789
2N3790
2N3789
2N3790
2N3791
2N3792
2N3789
2N3790
2N3791
2N3792
Min
Typ
Max
-
-
-2
-
-
-1.5
-
-
-1.5
V
25
-
250
-
4
-
4
-
V
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(**) These parameters are measured with voltage sensing contacts separate from the current carrying
contacts
05/11/2012
COMSET SEMICONDUCTORS
Unit
3|4
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
Pin 1 :
Pin 2 :
Case :
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
05/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
4|4