SEMICONDUCTORS BUZ73A N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope. ABSOLUTE MAXIMUM RATINGS Symbol VDS VSD IDS IDM VGS RDS(on) PT tJ tstg tL Ratings Drain-Source Voltage Drain-Source diode Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Gate-Source Voltage Drain-Source on Resistance Power Dissipation at Case Temperature TC= 25°C Operating Temperature Storage Temperature range Lead Temperature 1.6 mm from case for 10 seconde 01/10/2012 COMSET SEMICONDUCTORS Value Unit 200 <1.7 5.5 22 20 0.6 40 -55 to +150 -55 to +150 300 V V A A V Ω Watts °C 1/3 SEMICONDUCTORS BUZ73A THERMAL CHARACTERISTICS Symbol Ratings Value RthJC Thermal Resistance, chip case <3.1 RthJA Thermal Resistance, chip to ambient <75 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VDSS VGS(th) IDSS Ratings Test Condition(s) Drain-Source Breakdown Voltage Gate-threshold Voltage Zero Gate Voltage Drain Current IGSS RDS(on) Gate-Source leakage Current Drain-Source on Resistance gfs Transconductance CISS COSS CRSS td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time 01/10/2012 Min Typ Max Unit ID=250 µA, VGS=0 V 200 - - V ID=1 mA, VGS= VDS VDS=200 V, VGS=0 V Tj=25 °C VDS=200 V, VGS=0 V Tj=125 °C VGS=20 V, VDS=0 V ID=4.5 A, VGS=10 V VDS >2 * ID * RDS(on)max ID=4.5 A 2.1 3 4 V - 0.1 1 - 1 100 - 10 0.5 100 0.6 nA Ω 3 4.2 - S - 400 85 45 10 40 55 30 530 130 70 15 60 75 40 VGS=0 V, VDS=25 V f= 1MHz VDD=30 V, VGS=10 V ID=3 A RGS= 50 Ω COMSET SEMICONDUCTORS µA pF ns 2/3 SEMICONDUCTORS BUZ73A MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Pin 1 : Pin 2 : Pin 3 : Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Gate Drain Source Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3