IC MOSFET SMD Type Product specification 2SK2504 Features TO-252 Low on-resistance. Fast switching speed. +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Easy to parallel. +0.15 0.50-0.15 +0.2 9.70-0.2 Easily designed drive circuits. 3.80 Wide SOA (safe operating area). 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS Drain current 20 V ID 5 A Idp * 20 A W Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source breakdown voltage VDSS ID=1mA,VGS=0V Drain cut-off current IDSS VDS=100V,VGS=0 Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons Min Max IGSS VGS= 20V,VDS=0 VDS=10V,ID=1mA 1.0 Yfs VDS=10V,ID=2.5A 4.0 100 2.5 VGS=10V,ID=2.5A 0.18 0.22 0.25 0.28 VDS=10V,VGS=0,f=1MHZ A nA V S VGS=4V,ID=2.5A Ciss Unit V 10 VGS(th) RDS(on) Typ 100 520 pF Output capacitance Coss 175 pF Reverse transfer capacitance Crss 60 pF Turn-on delay time ton 5 ns 20 ns 50 ns 20 ns Rise time tr Turn-off delay time toff Fall time tf http://www.twtysemi.com ID=2.5A,VGS(on)=10V,RG=10 ,RL=20 ,VDD=50V [email protected] 4008-318-123 1 of 1