UD4004 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The UD4004 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD4004 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS 40V RDS(ON) ID 11.5mΩ 42A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 1 42 A 1 32 A 85 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 69 mJ IAS Avalanche Current 25 A Total Power Dissipation 34.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4 Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 3.6 ℃/W UD4004 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=20A --- 9.5 11.5 VGS=4.5V , ID=10A --- 13.5 16.5 1.0 1.5 2.5 V --- -5.64 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 35.9 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 4.2 Ω Qg Total Gate Charge (4.5V) --- 10.7 --- Qgs Gate-Source Charge --- 3.3 --- Qgd Gate-Drain Charge --- 4.2 --- Td(on) VDS=20V , VGS=4.5V , ID=12A nC --- 8.6 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 3.4 --- Turn-Off Delay Time ID=6A --- 24.8 --- Fall Time --- 2.2 --- Ciss Input Capacitance --- 1314 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit 45 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 42 A --- --- 85 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD4004 N-Ch 40V Fast Switching MOSFETs Typical Characteristics 20 12 ID=12A VGS=10V 10 VGS=7V 16 VGS=4.5V RDSON (mΩ) ID Drain Current (A) VGS=5V 8 6 12 VGS=3V 4 2 8 0 0 0.25 0.5 0.75 2 1 VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 6 10 VGS , Gate to Source Voltage (V) IS Source Current(A) VDS=20V 4 TJ=150℃ TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 ID=12A 8 6 4 2 0 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 10 15 QG , Total Gate Charge (nC) 20 25 Fig.4 Gate-charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 5 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UD4004 N-Ch 40V Fast Switching MOSFETs 10000 1000 F=1.0MHz 100 10us ID (A) 1000 100us 10 Coss 100 Crss 10ms 100ms DC 1 TC=25℃ Single Pulse 10 0 1 5 9 13 17 21 25 0.1 1 VDS Drain to Source Voltage (V) 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) Capacitance (pF) Ciss DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 4