30 Watts, 2110-2170 MHz GOLDMOS ® Field Effect Transistor PTF 102015 Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures excellent device lifetime and reliability. • INTERNALLY MATCHED • Typical WCDMA Performance - Average Output Power = 4.5 Watts - Gain = 16 dB - Efficiency = 20% (Channel Bandwidth 3.84 MHz) • Typical CW Performance - Output Power at P-1dB = 34 Watts - Gain = 15 dB - Efficiency = 47% • Full Gold Metallization • Integrated ESD Protection; Class 1 (minimum) Human Body Model • Excellent Thermal Stability Typical Single Carrier WCDMA Performance V DS = 28 V IDQ = 380 mA, f C = 2170 MHz 20 -15 -25 16 Gain -35 12 Efficiency 8 -45 ACPR1 (f C + 5 MHz) 4 0 1.0 2.0 3.0 4.0 ACPR (dB) Efficiency (%) & Gain (dB) 24 • Broadband Internal Matching • Low HCI Drift • Capable of Handling 10:1 VSWR @ 28 V, 30 Watts (CW) Output Power -55 -65 5.0 PTF 1020 15 Output Power (Watts) Package 20265 Guaranteed Performance WCDMA Measurements (in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, POUT = 4.5 W f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1 Characteristic Symbol Min Typ Max Units ACPR — -46 -42 dB Gain Gps 14.5 16 — dB Drain Efficiency hD — 20 — % Adjacent Channel Power Ratio Two-Tone Measurements (in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, POUT = 30 W PEP, fc = 2170 MHz, Tone Spacing = 100 kHz Characteristic Symbol Min Typ Max Units Gain Gps 14 15 — dB Drain Efficiency hD — 39 — % Intermodulation Distortion IMD — -32 -28 dBc All published data at TCASE = 25°C unless otherwise indicated. Data Sheet Rev. A 1 2002-10-08 PTF 102015 Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — Volts Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A RDS(on) — .3 — Ohms Quiescent Current Gate Voltage VDS = 28 V, ID = 380 mA VGS(Q) 2.5 3.2 4 Volts Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 100 nA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 109 Watts 0.625 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.5 °C/W IM3 vs. Output Power at Various Biases Broadband Test Fixture Performance 18 0 V DD = 28 V, f = 2170 MHz Tone Spacing = 100 KHz -10 60 Efficiency 50 16 -20 Gain (dB) IM3 (dBc) Gain 420 mA -30 250 mA -40 -50 -60 6 10 14 18 22 26 40 V DD = 28 V IDQ = 380 mA POUT = 30 W -305 20 -15 Return Loss 10 -25 8 0 2070 2090 2110 2130 2150 2170 2190 2210 30 Output Power (W-PEP) Data Sheet Rev. A 12 10 380 mA 2 14 Return Loss (dB) Efficiency (%) Typical Performance Frequency (MHz) 2 2002-10-08 PTF 102015 Typical Performance (cont.) 60 V DD = 28 V, IDQ = 380 mA 17 50 Efficiency Gain (dB) 16 Gain 15 40 14 30 13 2XWSXW3RZHU 12 2070 2105 2140 20 2210 2175 Power Gain (dB) 18 Power Gain vs. Output Power 16.5 Output Power (W) & Efficiency (%) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency IDQ = 420 mA 16.0 IDQ = 380 mA 15.5 I 15.0 = 250 mA 14.5 V DD = 28 V f = 2170 MHz 14.0 13.5 1 10 100 Output Power (W) Frequency (MHz) Output Power (at 1 dB Compression) vs. Supply Voltage Gain & Efficiency vs. Power Output 17 55 16 45 Efficiency 15 35 14 25 V DD = 28 V IDQ = 380 mA f = 2170 MHz 13 15 12 Output Power (W) Gain Efficiency (%)x Gain (dB) 42 5 0 5 10 15 20 25 30 IDQ = 380 mA f = 2170 MHz 38 34 30 26 22 35 24 Output Power (Watts) 1.03 V DD = 28 V, IDQ = 380 mA f = 2170 MHz, Tone Spacing = 100 KHz 1.02 Bias Voltage (V) 0 -20 IMD (dBc) 27 28 3rd Order 5th -40 -50 -60 7th -70 4 8 12 16 20 24 28 1.01 1.00 0.20 0.77 1.33 1.90 2.47 3.03 0.99 0.98 0.97 0.95 -20 32 Output Power (Watts-PEP) Data Sheet Rev. A 30 Voltage normalized to 1.0 V Series show current (A) 0.96 -80 0 29 Gate-Source Voltage vs. Case Temperature (as measured in a broadband circuit) -30 26 Supply Voltage (Volts) Intermodulation Distortion vs. Output Power -10 25 30 80 130 Case Temperature (°C) 3 2002-10-08 PTF 102015 Typical Performance (cont.) Capacitance vs. Supply Voltage * 90 14 12 70 Cgs V GS = 0 V f = 1 MHz 60 10 8 50 40 6 Cds 30 4 20 10 Cdg (pF)x Cds & Cgs (pF)x 80 2 Cdg 0 0 0 10 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Z0 = 50 W Broadband Circuit Impedance D Z Source Z Load G S Frequency Z Source W Z Load W MHz R jX R jX 2070 13.5 -12.1 5.7 -8.5 2110 14.9 -11.5 5.1 -8.2 2140 15.7 -11.4 4.8 -8.1 2170 15.9 -11.6 4.1 -8.0 2210 16.5 -11.2 3.2 -7.3 Data Sheet Rev. A 4 2002-10-08 PTF 102015 Test Circuit Test Circit Schematic for f = 2170 MHz DUT PTF 102015 0.102 l @ 2170 MHz 0.078 l @ 2170 MHz 0.098 l @ 2170 MHz 0.053 l @ 2170 MHz 0.136 l @ 2170 MHz 0.054 l @ 2170 MHz 0.340 l @ 2170 MHz 0.060 l @ 2170 MHz 0.019 l @ 2170 MHz 0.110 l @ 2170 MHz 0.087 l @ 2170 MHz 0.373 l @ 2170 MHz l1 l2 l3 l4 l5 l6 l7 l8 l9 l 10 l 11 l 12 LDMOS Transistor Microstrip 50 W Microstrip 22.8 W Microstrip 42.8 W Microstrip 11.6 W Microstrip 74 W Microstrip 11.6 W Microstrip 50 W Microstrip 28.6 W Microstrip 14.3 W Microstrip 50 W Microstrip 50 W Microstrip 54.5 W C1, C10 C2, C8, C11 C3, C7 C4, C12 C5 C6 C9 C13 J1, J2 L1 R1 R2 Circuit Board 10 µF, 35 V Capacitor, Digi-Key PC56106 0.1 µF, 50 V Capacitor, Digi-Key PCC103 BCT 11 pF Capacitor, 100 A 110 33 pF Capacitor, 100 A 330 2.1 pF Capacitor, 100 A 2R1 1.8 pF Capacitor, 100 A 1R8 100 µF, 50 V Capacitor, Digi-Key P5182 0.8 pF Capacitor, 100 A 0R8 Connector, SMA, Female, Panel Mount 6 mm Ferrite Phillips 53/3/4.6-452 10 ohm, 1/8 W Chip Resistor 1206 Digi-Key 100 ECT 1K ohm, 1/8 W Chip Resistor 1206 Digi-Key 102 ECT .030" thick, TMM4, 2 oz Copper, Fabrication Assembly Diagram (not to scale) Data Sheet Rev. A 5 2002-10-08 PTF 102015 Case Outline Specifications Case 20265 Primary dimensions are in inches, altermate dimensions are mm. Infineon Technologies Wireless Solutions Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International www.ericsson.com/rfpower e-mail: [email protected] Data Sheet Rev. A The latest and most complete information can be found on our website. Data Sheet EUS/KR 1522-PTF 102015 Edition 10-08-02 © Infineon Technologies, 2000-2002 – All Rights Reserved 6 2002-10-08