ERICSSON PTF10052

PTF 10052
35 Watts, 1.0 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
Back Side Common Source
•
100% Lot Traceability
•
Available in Package 20222 as PTF 10007
Typical Output Power & Efficiency
vs. Input Power
50
100
Output Pow er (W)
80
Ef ficiency (%)
30
20
60
40
VDD = 28 V
IDQ = 300 m A
f = 960 MHz
10
20
1000
A-12
0
B-1
100
52
56
234
3456
1
2
6
7
9725
Package
20222
0
0
991
Efficiency
Output Power
40
Package
20235
3
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 300 mA, f = 960 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gps
12.0
13.5
—
dB
P-1dB
35
—
—
Watts
h
50
55
—
%
Y
—
—
10:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10052
Electrical Characteristics
Characteristic
(100% Tested)
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA
Symbol
Min
Typ
Max
Units
V(BR)DSS
65
70
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
2.8
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
120
Watts
0.7
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
1.4
°C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
15
50
Gain (dB)
40
10
5
0
400
Output Pow er (W) 30
VDD = 28 V
IDQ = 300 mA
500
600
700
800
900
20
1000
50
16
Gain
VDD = 28 V
12
IDQ = 300 mA
POUT = 35 W
8
4
925
Frequency (MHz)
930
935
940
-30
5
20
-15
Return Loss (dB) 10
-25
0
945 950 955 960-35
Frequency (MHz)
2
40
Efficiency
Gain
20
60
60
Efficiency (%)
Return Loss
Efficiency (%)
25
Gain (dB)
70
Output Power & Efficiency
30
Broadband Test Fixture Performance
20
e
PTF 10052
Typical Performance
Intermodulation Distortion vs. Output Power
Power Gain vs. Output Power
-10
IDQ = 300 mA
15
IDQ = 150 mA
14
13
IDQ = 75 mA
12
VDD = 28 V
f = 960 MHz
1.0
10.0
-30
f1 = 960.000 MHz
f2 = 960.100 MHz
5th
-40
7th
-60
100.0
0
10
Output Power (Watts)
20
30
40
50
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
Capacitance vs. Supply Voltage
45
120
40
Cds and Cgs (pF)
IDQ = 300 mA
POUT = 5 W
f = 960 MHz
35
40
VGS =0 V
f = 1 MHz
100
Cgs
80
35
30
25
60
20
15
Cds
40
10
20
30
5
Crss
0
22
24
26
28
30
32
34
0
0
10
Supply Voltage (Volts)
20
30
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
Bias Voltage (V)
Output Power (Watts)
3rd
-50
11
0.1
-20
VDD = 28 V
IDQ = 300 m A
1.01
0.3
1.00
0.87
0.99
1.44
0.98
2.01
0.97
2.58
0.96
3.15
0.95
-20
30
80
Temp. (°C)
3
130
40
Crss (pF)
16
IMD (dBc)
Power Gain (dB)
17
e
PTF 10052
Impedance Data (shown for fixed-tuned broadband circuit)
VDD = 28 V, POUT = 35 W, IDQ = 300 mA
Z0 = 50 W
D
Z Source
Z Load
G
S
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
850
1.48
-2.80
2.60
1.55
900
1.45
-1.65
2.60
2.30
950
1.35
-0.30
2.68
3.40
1000
1.10
0.88
2.70
4.15
4
e
PTF 10052
Typical Scattering Parameters
(VDS = 28 V, ID = 2.0 A)
f
(MHz)
S11
S21
S12
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
0.948
0.951
0.955
0.956
0.957
0.959
0.960
0.962
0.963
0.964
0.964
0.965
0.967
0.966
0.967
0.967
0.968
0.968
0.967
0.966
0.967
0.968
0.967
0.967
0.967
0.966
0.966
0.966
0.966
0.966
0.965
-167
-168
-168
-168
-168
-168
-169
-169
-169
-169
-169
-169
-169
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-171
-171
-171
-171
-171
3.668
3.403
3.161
2.943
2.745
2.575
2.421
2.282
2.151
2.024
1.907
1.806
1.72
1.636
1.558
1.483
1.413
1.345
1.281
1.228
1.179
1.134
1.088
1.039
0.993
0.957
0.922
0.890
0.859
0.827
0.794
33
32
30
29
28
27
26
25
24
22
22
21
21
20
19
18
18
17
17
17
16
16
15
15
14
14
14
14
13
13
12
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.004
0.004
0.004
-37
-37
-37
-36
-38
-35
-34
-30
-29
-28
-23
-20
-13
-6
3
8
21
25
33
44
51
55
59
67
68
73
75
79
81
83
86
0.858
0.866
0.877
0.886
0.892
0.898
0.903
0.907
0.911
0.913
0.919
0.925
0.929
0.929
0.929
0.928
0.930
0.932
0.935
0.937
0.938
0.939
0.938
0.938
0.938
0.941
0.943
0.941
0.942
0.943
0.942
-149
-150
-151
-152
-152
-153
-153
-154
-155
-155
-156
-156
-156
-157
-157
-157
-158
-158
-159
-159
-159
-159
-160
-160
-160
-161
-161
-161
-161
-161
-162
Test Circuit
Parts Layout (not to scale)
5
S22
e
PTF 10052
Test Circuit Schematic for f = 960 MHz
DUT
C1, C5
C2
C3
C4
C6, C8
C7, C9
C10
L1
R1
R2
l1, l4
l2
l3
Circuit Board
PTF 10052
39 pF, Capacitor ATC 100 B
7.5 pF, Capacitor ATC 100 B
0.6–6.0 pF, Trimmer Capacitor, Johanson, 5701-PC
0.35–3.5 pF, Trimmer Capacitor, Johanson, 5801-PC
51 pF, Capacitor ATC 100 B
0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND
100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276
4 Turn, #20 AWG, .120” I.D.
1 K, 1/4 W Resistor
10 K, 1/4 W Resistor
Microstrip 50 W
0.185 l 960 MHz
Microstrip 5.70 W
0.240 l 960 MHz
Microstrip 9.30 W
.028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz.
copper
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
LP
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10052 Uen Rev. A 01-10-2000