PTF 10052 35 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • 100% Lot Traceability • Available in Package 20222 as PTF 10007 Typical Output Power & Efficiency vs. Input Power 50 100 Output Pow er (W) 80 Ef ficiency (%) 30 20 60 40 VDD = 28 V IDQ = 300 m A f = 960 MHz 10 20 1000 A-12 0 B-1 100 52 56 234 3456 1 2 6 7 9725 Package 20222 0 0 991 Efficiency Output Power 40 Package 20235 3 Input Power (Watts) RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Min Typ Max Units Gps 12.0 13.5 — dB P-1dB 35 — — Watts h 50 55 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10052 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Symbol Min Typ Max Units V(BR)DSS 65 70 — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 120 Watts 0.7 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.4 °C/W Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 15 50 Gain (dB) 40 10 5 0 400 Output Pow er (W) 30 VDD = 28 V IDQ = 300 mA 500 600 700 800 900 20 1000 50 16 Gain VDD = 28 V 12 IDQ = 300 mA POUT = 35 W 8 4 925 Frequency (MHz) 930 935 940 -30 5 20 -15 Return Loss (dB) 10 -25 0 945 950 955 960-35 Frequency (MHz) 2 40 Efficiency Gain 20 60 60 Efficiency (%) Return Loss Efficiency (%) 25 Gain (dB) 70 Output Power & Efficiency 30 Broadband Test Fixture Performance 20 e PTF 10052 Typical Performance Intermodulation Distortion vs. Output Power Power Gain vs. Output Power -10 IDQ = 300 mA 15 IDQ = 150 mA 14 13 IDQ = 75 mA 12 VDD = 28 V f = 960 MHz 1.0 10.0 -30 f1 = 960.000 MHz f2 = 960.100 MHz 5th -40 7th -60 100.0 0 10 Output Power (Watts) 20 30 40 50 Output Power (Watts-PEP) Output Power vs. Supply Voltage Capacitance vs. Supply Voltage 45 120 40 Cds and Cgs (pF) IDQ = 300 mA POUT = 5 W f = 960 MHz 35 40 VGS =0 V f = 1 MHz 100 Cgs 80 35 30 25 60 20 15 Cds 40 10 20 30 5 Crss 0 22 24 26 28 30 32 34 0 0 10 Supply Voltage (Volts) 20 30 Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) Output Power (Watts) 3rd -50 11 0.1 -20 VDD = 28 V IDQ = 300 m A 1.01 0.3 1.00 0.87 0.99 1.44 0.98 2.01 0.97 2.58 0.96 3.15 0.95 -20 30 80 Temp. (°C) 3 130 40 Crss (pF) 16 IMD (dBc) Power Gain (dB) 17 e PTF 10052 Impedance Data (shown for fixed-tuned broadband circuit) VDD = 28 V, POUT = 35 W, IDQ = 300 mA Z0 = 50 W D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 850 1.48 -2.80 2.60 1.55 900 1.45 -1.65 2.60 2.30 950 1.35 -0.30 2.68 3.40 1000 1.10 0.88 2.70 4.15 4 e PTF 10052 Typical Scattering Parameters (VDS = 28 V, ID = 2.0 A) f (MHz) S11 S21 S12 Mag Ang Mag Ang Mag Ang Mag Ang 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 0.948 0.951 0.955 0.956 0.957 0.959 0.960 0.962 0.963 0.964 0.964 0.965 0.967 0.966 0.967 0.967 0.968 0.968 0.967 0.966 0.967 0.968 0.967 0.967 0.967 0.966 0.966 0.966 0.966 0.966 0.965 -167 -168 -168 -168 -168 -168 -169 -169 -169 -169 -169 -169 -169 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -171 -171 -171 -171 -171 3.668 3.403 3.161 2.943 2.745 2.575 2.421 2.282 2.151 2.024 1.907 1.806 1.72 1.636 1.558 1.483 1.413 1.345 1.281 1.228 1.179 1.134 1.088 1.039 0.993 0.957 0.922 0.890 0.859 0.827 0.794 33 32 30 29 28 27 26 25 24 22 22 21 21 20 19 18 18 17 17 17 16 16 15 15 14 14 14 14 13 13 12 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004 -37 -37 -37 -36 -38 -35 -34 -30 -29 -28 -23 -20 -13 -6 3 8 21 25 33 44 51 55 59 67 68 73 75 79 81 83 86 0.858 0.866 0.877 0.886 0.892 0.898 0.903 0.907 0.911 0.913 0.919 0.925 0.929 0.929 0.929 0.928 0.930 0.932 0.935 0.937 0.938 0.939 0.938 0.938 0.938 0.941 0.943 0.941 0.942 0.943 0.942 -149 -150 -151 -152 -152 -153 -153 -154 -155 -155 -156 -156 -156 -157 -157 -157 -158 -158 -159 -159 -159 -159 -160 -160 -160 -161 -161 -161 -161 -161 -162 Test Circuit Parts Layout (not to scale) 5 S22 e PTF 10052 Test Circuit Schematic for f = 960 MHz DUT C1, C5 C2 C3 C4 C6, C8 C7, C9 C10 L1 R1 R2 l1, l4 l2 l3 Circuit Board PTF 10052 39 pF, Capacitor ATC 100 B 7.5 pF, Capacitor ATC 100 B 0.6–6.0 pF, Trimmer Capacitor, Johanson, 5701-PC 0.35–3.5 pF, Trimmer Capacitor, Johanson, 5801-PC 51 pF, Capacitor ATC 100 B 0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120” I.D. 1 K, 1/4 W Resistor 10 K, 1/4 W Resistor Microstrip 50 W 0.185 l 960 MHz Microstrip 5.70 W 0.240 l 960 MHz Microstrip 9.30 W .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. LP © 1998 Ericsson Inc. EUS/KR 1301-PTF 10052 Uen Rev. A 01-10-2000