ERICSSON PTF10112

PTF 10112
60 Watts, 1.8–2.0 GHz
GOLDMOS™ Field Effect Transistor
Description
•
The PTF 10112 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
Output Power (Watts)
80
60
1011
3456 2
98
A-12
40
37
VCC = 28 V
20
IDQ = 580 mA
f = 2000 MHz
0
0
1
2
3
4
5
6
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz)
Drain Efficiency
(VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz
—all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gps
11
12
—
dB
P-1dB
60
—
—
Watts
hD
—
41
—
%
Y
—
—
10:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10112
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 100 mA
V(BR)DSS
65
—
—
Volts
Zero Gate Voltage Drain Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
5.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 150 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 2 A
gfs
—
4.0
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation at
PD
237
Watts
1.35
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
0.74
°C/W
Output Power (W)
Gain (dB)
13
12
70
Gain (dB)
60
11
10
50
VCC = 28 V
IDQ = 580 mA
9
1750
1850
40
Efficiency (%)
1950
30
2050
60
50
Gain (dB)
12
40
VDD = 28 V
11
Efficiency (%)
@P-1dB
IDQ = 580mA
0
30
-10
20
POUT = 20 W
10
-20
10
Return Loss (dB)
9
1930
Frequency (MHz)
1940
1950
1960
1970
Frequency (MHz)
2
1980
-30
0
1990
Return Loss (dB)
80
Gain (dB)
14
Broadband Test Fixture Performance
13
Output Power & Efficiency
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
Efficiency (%)
Typical Performance
e
PTF 10112
Intermodulation Distortion vs. Output Power
Output Power vs. Supply Voltage
(as measured in a broadband circuit)
-15
VDD = 28 V
-25
70
IMD (dBc)
Output Power (Watts)
80
60
IDQ = 580 mA
f = 2000 MHz
50
IM3
IDQ = 580 mA
f1 = 1959 MHz
-35
f2 = 1960 MHz
IM5
-45
IM7
-55
-65
40
22
24
26
28
30
32
0
34
10
20
30
40
50
60
70
Output Power (Watts-PEP)
Supply Voltage (Volts)
Power Gain vs. Output Power
Capacitance vs. Supply Voltage *
14
24
240
11
10
IDQ = 290 mA
9
8
VDD = 28 V
f = 2000 MHz
IDQ = 145 mA
7
200
VGS = 0 V
f = 1 MHz
160
18
Cgs
120
12
Cds
80
6
40
Crss
0
0.1
1.0
10.0
Crss
Cds and Cgs (pF)
IDQ = 580 mA
12
100.0
0
0
10
Output Power (Watts)
20
30
40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished
product will not yield these results.
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
Bias Voltage (V)
Power Gain (dB)
13
1.01
1.00
0.400
0.99
1.383
2.367
0.98
3.350
0.97
4.333
0.96
5.317
0.95
-20
30
Temp. (°C)
3
80
130
e
PTF 10112
Impedance Data
VDD = 28 V, POUT = 60 W, IDQ = 580 mA
D
Z Source
Z Load
G
S
Z Source W
Frequency
Z Load W
GHz
R
jX
R
jX
1.75
3.74
-4.50
1.48
0.25
1.80
3.80
-4.80
1.56
-0.20
1.85
3.96
-5.10
1.66
-0.50
1.90
4.90
-5.50
1.32
-0.80
1.95
7.90
-6.10
1.16
-0.60
2.00
9.00
-4.60
1.10
-0.45
2.05
10.00
-1.70
1.18
-0.30
4
Z0 = 50 W
e
PTF 10112
Test Circuit
Test Circuit Block Diagram for f = 1.93–1.99 GHz
Q1
l1, l6
l2
l3
l4
l5
C1, C2, C5, C8
C3, C7
C4, C6
PTF 10112
.10 l @ 2.0 GHz
.08 l @ 2.0 GHz
.162 l @ 2.0 GHz
.22 l @ 2 GHz
10 pF Chip Cap
0.1 mF Chip Cap
10 mF SMT Tantalum
LDMOS RF Transistor
Microstrip 50 W
Microstrip 9.4 W
Microstrip 70 W
Microstrip 5.8 W
Microstrip 65 W
ATC 100 B
L1
L2
R1, R2
R3
R4
R5
Circuit Board
2.7 nh
SMT Coil
4mm
SMT Ferrite Bead
220 W
Chip Resistor K1206
2K
SMT Potentiometer
10 W
Chip Resistor K1206
1W
Chip Resistor K1206
.028" Dielectric Thickness, er = 4.0,
AlliedSignal, G200, 2 oz. copper
e
10112
Artwork (1 inch
)
Parts Layout (not to scale)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10112 Uen Rev. A 01-08-2000
e
Notes:
6