Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0819 (2SB819) Unit: mm 6.9±0.1 1.5 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 1.0 4.1±0.2 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 7 3 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 0.45±0.05 (Ta=25˚C) Symbol ■ Electrical Characteristics 0. 0.55±0.1 ■ Absolute Maximum Ratings Parameter 0.85 1.25±0.05 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 max Unit VCB = 20V, IE = 0 Conditions min typ 1 µA ICEO VCE = 10V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IE = 0 10 µA Collector to base voltage VCBO IC = 1mA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 40 V Forward current transfer ratio hFE*1 VCE = 5V, IC = Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.15A*2 1A*2 80 120 220 1 0.2A*2 Base to emitter saturation voltage VBE(sat) IC = 2A, IB = Transition frequency fT VCB = 5V, IE = –0.5A*2, f = 200MHz 150 1.5 Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 45 V MHz pF *2 *1h FE V Pulse measurement Rank classification Rank Q R hFE 80 ~ 160 120 ~ 220 Note.) The Part number in the Parenthesis shows conventional part number. 1 Transistor 2SD1051 IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C 3.5 IB=40mA Collector current IC (A) 35mA 3.0 30mA 2.5 25mA 20mA 2.0 15mA 1.5 10mA 1.0 0.2 5mA 0.5 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 1 3 Ta=75˚C –25˚C 100 50 0.1 0.3 1 3 0.003 0.001 0.01 0.03 20 0 30 100 Collector to base voltage VCB (V) 0.3 1 10 VCB=5V Ta=25˚C 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Emitter current IE (A) ICBO — Ta 1000 VCB=20V Ta=25˚C 50 300 40 30 20 10 0 0.001 3 200 ICBO (Ta) ICBO (Ta=25˚C) 40 0.1 Collector current IC (A) 10 60 Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) 0.01 VCER — RBE 60 10 0.03 Collector current IC (A) 80 3 25˚C 150 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 1 –25˚C 0.1 240 200 Cob — VCB 100 25˚C fT — IE 250 Collector current IC (A) 120 Ta=75˚C 0.3 VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 1 300 IC/IB=10 0.1 10 3 hFE — IC 100 0.01 0.01 0.03 8 IC/IB=10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 6 10 Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 4.0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 100 30 10 3 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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