ETC 2SC4606R

Transistor
2SC4606
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1762
Unit: mm
6.9±0.1
1.0
0.85
4.5±0.1
0.
7
2.4±0.2 2.0±0.2 3.5±0.1
●
High collector to emitter voltage VCEO.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
4.1±0.2
1.5
■ Absolute Maximum Ratings
*
(Ta=25˚C)
3
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
0.45±0.05
2
2.5
1:Base
2:Collector
3:Emitter
1
1.25±0.05
0.55±0.1
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
0.1
µA
Collector cutoff current
ICBO
VCB = 20V, IE = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
80
V
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
80
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
hFE1
Forward current transfer ratio
*1
VCE = 10V, IC =
150mA*2
130
330
hFE2
VCE = 5V, IC = 500mA*2
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA*2
0.2
0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = 300mA, IB = 30mA*2
0.85
1.2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
120
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
50
100
MHz
20
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
R
S
hFE1
130 ~ 220
185 ~ 330
1
Transistor
2SC4606
PC — Ta
IC — VCE
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
1.2
Ta=25˚C
1.0
9mA
8mA
7mA
0.8
6mA
5mA
0.6
4mA
3mA
0.4
2mA
0.2
0.2
0
40
60
80 100 120 140 160
2
4
6
8
10
0
Collector to emitter voltage VCE (V)
3
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
30
100
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
300
1000
3
10
fT — IE
100
300
1000
40
–10
25˚C
–25˚C
150
100
50
–30
Emitter current IE (mA)
–100
3
10
30
100
300
1000
Collector current IC (mA)
ICBO — Ta
104
VCB=20V
IE=0
f=1MHz
Ta=25˚C
40
103
30
20
102
10
10
0
–3
Ta=75˚C
200
1
ICBO (Ta)
ICBO (Ta=25˚C)
80
0
–1
30
50
Collector output capacitance Cob (pF)
120
10
250
Cob — VCB
160
8
VCE=10V
Collector current IC (mA)
VCB=10V
Ta=25˚C
6
0
1
Collector current IC (mA)
200
4
300
IC/IB=10
0.01
10
2
Base current IB (mA)
hFE — IC
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
3
0.4
VBE(sat) — IC
10
1
0.6
0
0
VCE(sat) — IC
0.1
0.8
0.2
1mA
Forward current transfer ratio hFE
20
Ambient temperature Ta (˚C)
Transition frequency fT (MHz)
1.0
0
0
2
VCE=10V
Ta=25˚C
IB=10mA
Collector current IC (A)
1.2
IC — I B
1.2
Collector current IC (A)
Collector power dissipation PC (W)
1.4
1
1
3
10
30
100
Collector to base voltage VCB (V)
0
60
120
180
Ambient temperature Ta (˚C)
2SC4606
Transistor
ICEO — Ta
105
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
3
Collector current IC (A)
ICEO (Ta)
ICEO (Ta=25˚C)
104
103
102
1
ICP
t=10ms
IC
0.3
t=1s
DC
0.1
0.03
0.01
10
0.003
1
0
20
40
60
80
100 120 140
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR