ETC HAF2012(L)

HAF2012(L),HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-677A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
•
•
•
•
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
4
Gate resistor
G
Tempe–
rature
Sencing
Circuit
Latch
Circuit
4
1
1
Gate
Shut–
down
Circuit
S
2
2
3
3
1. Gate
2. Drain
3. Source
4. Drain
HAF2012(L), HAF2012(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
16
V
Gate to source voltage
VGSS
–2.8
V
Drain current
ID
20
A
40
A
20
A
50
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Input voltage
VIH
3.5
—
—
V
VIL
—
—
1.2
V
Input current
I IH1
—
—
100
µA
Vi = 8V, VDS = 0
(Gate non shut down)
I IH2
—
—
50
µA
Vi = 3.5V, VDS = 0
I IL
—
—
1
µA
Vi = 1.2V, VDS = 0
Input current
I IH(sd)1
—
0.8
—
mA
Vi = 8V, VDS = 0
(Gate shut down)
I IH(sd)2
—
0.35
—
mA
Vi = 3.5V, VDS = 0
Shut down temperature
Tsd
—
175
—
°C
Channel temperature
Gate operation voltage
VOP
3.5
—
13
V
2
Test Conditions
HAF2012(L), HAF2012(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I D1
10
—
—
A
VGS = 3.5V, VDS = 2V
Drain current
I D2
—
—
10
mA
VGS = 1.2V, VDS = 2V
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
16
—
—
V
I G = 100µA, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS
–2.8
—
—
V
I G = –100µA, VDS = 0
Gate to source leak current
I GSS1
—
—
100
µA
VGS = 8V, VDS = 0
I GSS2
—
—
50
µA
VGS = 3.5V, VDS = 0
I GSS3
—
—
1
µA
VGS = 1.2V, VDS = 0
I GSS4
—
—
–100
µA
VGS = –2.4V, VDS = 0
I GS(op)1
—
0.8
—
mA
VGS = 8V, VDS = 0
I GS(op)2
—
0.35
—
mA
VGS = 3.5V, VDS = 0
I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off)
1.0
—
2.25
V
I D = 1mA, VDS = 10V
Static drain to source on state RDS(on)
resistance
—
50
65
mΩ
I D = 10A, VGS = 4V Note3
Static drain to source on state RDS(on)
resistance
—
30
43
mΩ
I D = 10A, VGS = 10V Note3
Forward transfer admittance
|yfs|
6
12
—
S
I D = 10A, VDS = 10V Note3
Output capacitance
Coss
—
630
—
pF
VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
t d(on)
—
7.5
—
µs
I D = 5A, VGS = 5V
Rise time
tr
—
29
—
µs
RL = 6Ω
Turn-off delay time
t d(off)
—
34
—
µs
Fall time
tf
—
26
—
µs
Body–drain diode forward
voltage
VDF
—
1.0
—
V
I F = 20A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
110
—
ns
I F = 20A, VGS = 0
diF/ dt =50A/µs
Over load shut down
t os1
—
1.8
—
ms
VGS = 5V, VDD = 12V
t os2
—
0.7
—
ms
VGS = 5V, VDD = 24V
Input current (shut down)
Zero gate voltege drain
current
operation time
Note4
Note:
3. Pulse test
4. Include the junction temperature rise of the over loaded condition.
• See characteristic curve of HAF2001.
3
HAF2012(L), HAF2012(S)
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
80
60
40
20
0
50
100
Case Temperature
4
150
Tc (°C)
200
HAF2012(L), HAF2012(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
5
HAF2012(L), HAF2012(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
7.8
7.0
(1.5)
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
HAF2012(L), HAF2012(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
7
HAF2012(L), HAF2012(S)
Cautions
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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