STP40NF10 STD40NF10 - STB40NF10 N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STP40NF10 STD40NF10 STB40NF10 100 V 100 V 100 V < 0.028 Ω < 0.028 Ω < 0.028 Ω 50 A 50 A 50 A ■ ■ ■ ■ ■ 3 TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 1 2 DPAK TO-220 3 1 2 D PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS ■ HIGH-CURRENT SWITCHING APPLICATIONS ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP40NF10 P40NF10 TO-220 TUBE STD40NF10T4 D40NF10 DPAK TAPE & REEL STB40NF10T4 B40NF10 D²PAK TAPE & REEL October 2003 1/13 STP40NF10 - STD40NF10 - STB40NF10 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 - D²PAK Unit DPAK Drain-source Voltage (VGS = 0) 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID(*) Drain Current (continuous) at TC = 25°C 50 A ID Drain Current (continuous) at TC = 100°C 35 A Drain Current (pulsed) 200 A VDS VDGR IDM () PTOT Total Dissipation at TC = 25°C Derating Factor 150 125 W 1 0.83 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 35 V/ns EAS (2) Single Pulse Avalanche Energy 150 135 mJ Tstg Tj Storage Temperature – 55 to 175 Operating Junction Temperature °C () Pulse width limited by safe operating area (*) Limited by Package (1) ISD ≤ 50A, di/dt ≤ 600 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C, ID = 50A, VDD = 25V THERMAL DATA TO-220 - D²PAK DPAK 1 1.2 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON /OFF Symbol V(BR)DSS IDSS Parameter Test Conditions Max. VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA 2.8 4 V 0.024 0.028 Ω VGS(th Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 25 A 100 Unit Zero Gate Voltage Drain Current (VGS = 0) VGS = ± 20V 2/13 Typ. ID = 250 µA, VGS = 0 Gate-body Leakage Current (VDS = 0) IGSS Min. Drain-source Breakdown Voltage 2 V STP40NF10 - STD40NF10 - STB40NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Parameter Test Conditions Forward Transconductance VDS = 25V, ID = 25 A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Crss Min. Typ. Max. Unit 20 S 1780 pF Output Capacitance 265 pF Reverse Transfer Capacitance 112 pF SWITCHING ON Symbol td(on) tr Parameter Test Conditions Rise Time VDD = 50 V, ID = 25 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD= 80V, ID= 50A, VGS = 10V Turn-on Delay Time Min. Typ. Max. Unit 28 ns 63 ns Qg Total Gate Charge Qgs Gate-Source Charge 60.6 9.6 nC Qgd Gate-Drain Charge 22.8 nC 80 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 50 V, ID = 25 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Typ. Max. 84 28 Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 50 A Source-drain Current (pulsed) 200 A Forward On Voltage ISD = 50 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 50 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.3 114 456 8 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 2. Pulse width limited by safe operating area. 3/13 STP40NF10 - STD40NF10 - STB40NF10 Safe Operating Area For TO-220/D²PAK Thermal Impedance For TO-220/D²PAK Safe Operating Area For DPAK Thermal Impedance For DPAK Output Characteristics Transfer Characteristics 4/13 STP40NF10 - STD40NF10 - STB40NF10 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP40NF10 - STD40NF10 - STB40NF10 Source-drain Diode Forward Characteristics 6/13 Normalized Drain-Source Breakdown vs Temp. STP40NF10 - STD40NF10 - STB40NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP40NF10 - STD40NF10 - STB40NF10 TO-220 MECHANICAL DATA DIM. 8/13 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP40NF10 - STD40NF10 - STB40NF10 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 9/13 STP40NF10 - STD40NF10 - STB40NF10 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 10/13 1 STP40NF10 - STD40NF10 - STB40NF10 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 12.992 0.059 P0 R MAX. MAX. D1 W MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.641 * on sales type 11/13 STP40NF10 - STD40NF10 - STB40NF10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/13 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP40NF10 - STD40NF10 - STB40NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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