Composite Transistors XN06537 (XN6537) Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 12 V VEBO 2.5 V IC 30 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) ■ Electrical Characteristics Parameter 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7H Internal Connection 6 Tr1 1 2 5 4 *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SC3110 × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 2V, IC = 0 Forward current transfer ratio hFE VCE = 10V, IC = 10mA 40 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 10mA 0.5 Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward transfer gain | S21e |2 VCE = 10V, IC = 20mA, f = 0.8GHz typ max Unit 100 nA 1 µA 0.99 4.5 GHz 1.2 12 pF dB Power gain GUM VCE = 10V, IC = 20mA, f = 0.8GHz 14 dB Noise figure NF VCE = 10V, IC = 5mA, f = 0.8GHz 1.3 dB Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN06537 PT — Ta IC — VCE 500 IC — VBE 30 60 200 100 20 IB=300µA 250µA 15 200µA 10 150µA 100µA 5 –25˚C 30 20 10 80 120 0 160 0 0 2 4 10 12 0 0.4 0.8 hFE — IC 10 3 1 0.3 25˚C Ta=75˚C 1.6 2.0 fT — IC 8 VCE=10V Forward current transfer ratio hFE 30 1.2 Base to emitter voltage VBE (V) 240 IC/IB=10 0.03 8 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 0.1 6 VCE=10V Ta=25˚C Transition frequency fT (GHz) 40 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 40 50µA 0 200 160 Ta=75˚C 120 25˚C 80 –25˚C 40 6 4 2 –25˚C 0.01 0.1 1 0.3 3 10 30 0 0.1 100 1 0.3 Cob — VCB 1.2 10 30 0.4 100 Collector to base voltage VCB (V) –100 1.5 2 VCE=10V IC=20mA E: earth 3 4 6 0.2 5 10 5 .2 0 .4 .6 .8 1 800MHz 500MHz 4 3 1.5 2 3 4 5 10 1000MHz S11 1000MHz S22 800MHz 500MHz –10 –5 –4 –0.2 2 –3 –0.4 –2 –0.6 –0.8 0 30 –30 0.4 1 10 1 0.8 0.6 0.2 0 –10 S11, S22 Rg=50Ω VCE=10V f=800MHz 7 Noise figure NF (dB) 0.6 3 –3 Collector current IC (mA) NF — IC 0.8 1 0 –1 100 8 f=1MHz IE=0 Ta=25˚C 1.0 3 Collector current IC (mA) Collector current IC (mA) Collector output capacitance Cob (pF) 25˚C 50 Collector current IC (mA) 300 0 2 VCE=10V 25 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 1 3 10 30 Collector current IC (mA) 100 –1 –1.5 Composite Transistors XN06537 S12, S21 VCE=10V IC=20mA E: earth +90˚ +120˚ +60˚ 1000MHz 800MHz S21 500MHz +150˚ +30˚ 800MHz 1000MHz ±180˚ –10 –15 –20 –25 –30 5 500MHz 10 15 S12 –150˚ 20 0˚ –30˚ –120˚ –60˚ –90˚ 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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