PD -91784A IRG4BC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package VCES = 600V VCE(on) typ. = 1.10V G @VGE = 15V, IC = 2.0A E n-ch an nel Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 14 8.0 18 18 4.0 18 ± 20 38 15 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight www.irf.com Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.50 ––– 2.0(0.07) 3.3 7.0 ––– 80 ––– Units °C/W g (oz) 1 4/24/2000 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRG4BC10SD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — Temperature Coeff. of Breakdown Voltage — 0.64 Collector-to-Emitter Saturation Voltage — 1.58 — 2.05 — 1.68 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.7 IC = 8.0A VGE = 15V — V IC = 14.0A See Fig. 2, 5 — IC = 8.0A, TJ = 150°C 6.0 VCE = V GE, IC = 250µA — mV/°C VCE = V GE, IC = 250µA — S VCE = 100V, IC =8.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 — 32 — 815 1200 720 1080 0.31 — 3.28 — 3.60 10.9 1.46 2.6 70 — 36 — 890 — 890 — 3.83 — 7.5 — 280 — 30 — 4.0 — 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 — 235 — nC ns mJ mJ ns mJ nH pF ns A nC A/µs Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150°C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 ƒ = 1.0MHz TJ = 25°C See Fig. 14 IF =4.0A TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V TJ = 25°C See Fig. 16 di/dt = 200A/µs TJ = 125°C TJ = 25°C See Fig. TJ = 125°C 17 Details of note Q through T are on the last page 2 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.irf.com IRG4BC10SD 10.0 For both: D uty cy cle : 5 0 % TJ = 12 5 °C T s in k = 90 °C G a te d rive a s sp e cifie d LOAD CURRENT (A) 8.0 P ow e r Dis sip ation = 9.2 W 6.0 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 4.0 I 2.0 Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 °C TJ = 150 °C 10 V = 15V 80µs PULSE WIDTH GE 1 0.5 1.0 1.5 2.0 2.5 3.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Powered by ICminer.com Electronic-Library Service CopyRight 2003 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 °C 10 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 5µs PULSE WIDTH 1 6 8 10 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC10SD 3.00 16 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE I C = 16 A 2.50 12 2.00 8 IC = 8 A 1.50 4 0 25 50 75 100 125 150 IC = 4 A 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.irf.com IRG4BC10SD C, Capacitance (pF) 400 Cies VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 300 C oes 200 Cres 100 20 VGE , Gate-to-Emitter Voltage (V) 500 0 1 10 10 5 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 100 3.50 3.45 3.40 3.35 3.30 40 60 80 RGRG, Gate , GateResistance Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Powered by ICminer.com Electronic-Library Service CopyRight 2003 10 15 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C 3.55 I C = 8A 20 5 Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 8A 15 VCE , Collector-to-Emitter Voltage (V) 3.60 100 RG =100Ω Ohm VGE = 15V VCC = 480V IC = 16 A 10 IC = 8 A IC = 4 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC10SD 100 RG TJ VCC 12 VGE = 100 100 Ω = 150 ° C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 15 9 6 VGE = 20V T J = 125 oC 10 3 SAFE OPERATING AREA 0 0 4 8 12 16 1 20 1 I C , Collector Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 100 TJ = 150°C 10 TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V oltage DDrop rop -- VVFM Forward Voltage F M((VV) ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.irf.com IRG4BC10SD 50 14 I F = 8.0A 45 12 I F = 4.0A VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 di f /dt - (A/µ s) 0 100 1000 1000 di f /dt - (A/µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 1000 VR = 2 00 V T J = 1 25°C T J = 2 5°C VR = 20 0V T J = 1 25 °C T J = 2 5°C 160 I F = 8.0A di (rec) M/dt- (A /µs) I F = 4.0A Qrr- (nC) 120 I F = 8.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Powered by ICminer.com Electronic-Library Service CopyRight 2003 A 100 100 1000 di f /dt - (A/µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4BC10SD Same ty pe device as D .U.T. 430µF 80% of Vce 90% D .U .T. 10% Vge VC 90% t d(off) 10% IC 5% Fig. 18a - Test Circuit for Measurement of tf tr ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs Eon Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic trr id d t tx ∫ Ic dt +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Powered by ICminer.com Electronic-Library Service CopyRight 2003 t4 V d id d t t3 ∫ Vd Ic dt t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC10SD V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X I C @25°C 0 - 480V 50V 600 0µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Powered by ICminer.com Electronic-Library Service CopyRight 2003 Figure 20. Pulsed Collector Current Test Circuit 9 IRG4BC10SD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19) SPulse width ≤ 80µs; duty factor ≤ 0.1%. TPulse width 5.0µs, single shot. Case Outline TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 4 3.78 (.149) 3.54 (.139) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255 ) 6.10 (.240 ) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.045) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.160) 3.55 (.140) A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.01 4 ) M B A M 2 .5 4 (.1 0 0) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 Powered by ICminer.com Electronic-Library Service CopyRight 2003 www.irf.com