FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. • 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge (27 nC typical) • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D G G D G S TO-220 TO-263AB FDP Series S FDB Series Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 200 V VGSS Gate-Source Voltage ± 20 V ID Drain Current A – Continuous (Note 1) 19 – Pulsed (Note 1) 40 A 93 W 0.63 3.2 W°/C V/ns –65 to +175 °C PD Total Power Dissipation @ TC = 25°C dv/dt Peak Diode Recovery dv/dt TJ, TSTG Operating and Storage Junction Temperature Range Derate above 25°C (Note 3) Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 1.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB2670 FDB2670 13’’ 24mm 800 units FDP2670 FDP2670 Tube n/a 45 units 2001 Fairchild Semiconductor Corporation FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 November 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 100 V, ID = 10 A 375 mJ 10 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 160 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA 4.5 V On Characteristics 200 V 241 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –9 VGS = 10 V, ID = 10 A VGS = 10V, ID = 10 A, TJ = 125°C 98 205 ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, ID = 10 A VDS = 100 V, f = 1.0 MHz V GS = 0 V, 2 4 mV/°C 130 285 20 mΩ A 24 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics 1320 pF 71 pF 24 pF (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time 23 37 ns Qg Total Gate Charge 27 38 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 100 V, VGS = 10 V, VDS = 100 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 10 A, 14 25 5 10 ns ns 26 41 ns 7 nC 10 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 10 A Voltage (Note 2) 0.8 19 A 1.3 V Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 Electrical Characteristics FDP2670/FDB2670 Typical Characteristics 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 VGS = 10V ID, DRAIN CURRENT (A) 7.0V 24 6.5V 18 6.0V 12 6 1.4 VGS = 6V 1.3 6.5V 1.2 7.0V 10V 1.1 1 0.9 0.8 0 0 3 6 9 12 0 15 6 Figure 1. On-Region Characteristics. 18 24 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 2.6 ID = 5A ID =10A VGS = 10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 150 0.3 0.25 TA = 125oC 0.2 0.15 0.1 TA = 25oC 0.05 0 175 5 6 7 8 9 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) 40 ID, DRAIN CURRENT (A) VDS = 50V 30 20 TA = 125oC 25oC 10 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 3.5 4.5 5.5 6.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 Typical Characteristics 2000 VDS = 50V ID = 10A f = 1MHz VGS = 0 V 75V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 100V 6 4 CISS 1500 1000 500 CRSS 2 0 0 0 5 10 15 20 25 0 30 25 Figure 7. Gate Charge Characteristics. 75 100 125 150 175 200 Figure 8. Capacitance Characteristics. 100 2000 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10us 100us 1ms 10ms 100ms DC 10 VGS = 10V SINGLE PULSE RθJC = 1.6oC/W 1 TC = 25oC 0.1 1 10 100 1000 SINGLE PULSE RθJC = 1.6°C/W TC = 25°C 1500 1000 500 0 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) COSS Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 1.6 °C/W 0.2 0.1 0.1 P(pk) t1 0.05 t2 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDP2670/FDB2670 Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4