BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit. Mode of operation f VDS PL PL(AV) Gp ηD ACPR400 ACPR600 ACPR750 ACPR1980 EVMrms IMD3 (MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (dBc) (dBc) (%) (dBc) CW 894 28 200 - 19.0 59 - - - - - - 2-tone 894 28 - 19.7 42.5 - - - - - −29 −72[1] - - 3.0 - - −45[2] −64[2] - - GSM EDGE CDMA 894 881.5 28 28 - 80 80 40 19.7 41.5 −61[1] 19.0 29.5 - [1] ACPR400 and ACPR600 at 30 kHz resolution bandwidth. [2] Test signal: IS-95, with PAR = 9.9 dB at 0.01 % probability. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical GSM EDGE performance at f = 894 MHz, VDS = 28 V and IDq = 900 mA: u Average output power = 80 W u Gain = 19.7 dB u Efficiency = 41.5 % u ACPR400 = −61 dBc u ACPR600 = −72 dBc u EVMrms = 3.0 % n Easy power control n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (800 MHz to 1000 MHz) n Internally matched for ease of use BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 1.3 Applications n RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF4G10-160 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 65 V VGS gate-source voltage −0.5 +15 V ID drain current - 15 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 50 W 0.55 0.64 K/W BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage Conditions Min Typ Max Unit VGS = 0 V; ID = 2.1 mA 65 - - V 2.9 3.5 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 230 mA 2.5 VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 2.65 3.15 3.65 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 µA IDSX drain cut-off current VGS = VGS(th) + 6 V; VDS = 10 V 35 42 - A IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 11 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 7.5 A - 0.065 - Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 3.0 - pF 7. Application information Table 7. Application information Mode of operation: 2-tone; f1 = 894 MHz; f2 = 894.2 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB test circuit. Symbol Parameter Conditions Min Typ Max Unit PL(PEP) = 160 W 18.5 19.7 - Gp power gain RLin input return loss PL(PEP) = 160 W - −10 ηD drain efficiency PL(PEP) = 160 W 40 42.5 - % IMD3 third order intermodulation distortion PL(PEP) = 160 W - −29 −26 dBc IMD5 fifth order intermodulation distortion PL(PEP) = 160 W - −38 −35 dBc IMD7 seventh order intermodulation distortion PL(PEP) = 160 W - −57 −53 dBc −6 dB dB 7.1 Ruggedness in class-AB operation The BLF4G10-160 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 160 W (CW); f = 894 MHz. BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 3 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 001aag546 21 Gp (dB) 60 ηD (%) Gp 19 ηD 001aag547 22 60 ηD (%) Gp (dB) 40 20 20 18 Gp 40 ηD 17 15 0 80 0 240 160 20 16 0 40 PL (W) PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 001aag548 0 0 120 80 IMD (dBc) Fig 2. Two-tone power gain and drain efficiency as functions of average load power; typical values 001aag549 0 IMD3 (dBc) −20 −20 IMD3 IMD5 −40 1 −40 2 3 IMD7 −60 4 −60 −80 −80 0 40 80 120 0 PL(AV) (W) 40 80 120 PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. VDS = 28 V; Tcase = 25 °C; f = 894 MHz. (1) IDq = 800 mA. (2) IDq = 900 mA. (3) IDq = 1000 mA. (4) IDq = 1100 mA. Fig 3. Intermodulation distortion a function of average load power; typical values Fig 4. IMD3 as a function of average load power; typical values BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 4 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 001aag550 21 50 ηD (%) Gp (dB) Gp 20 40 001aag551 −50 ACPR (dBc) −60 ACPR400 30 19 ηD 18 20 ACPR600 −70 10 17 16 0 20 40 60 0 80 100 PL(AV) (W) −80 0 VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. Fig 5. GSM EDGE power gain and drain efficiency as functions of average load power; typical values 001aag552 16 20 EVM (%) Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as a function of average load power; typical values 001aag553 −56 4 ACPR (dBc) EVM (%) −60 12 3 ACPR400 −64 EVMM 8 2 −68 4 1 EVMrms EVMrms −72 0 0 20 40 60 80 100 PL(AV) (W) VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. 0 0 40 ηD (%) 60 VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 894 MHz. Fig 7. GSM EDGE rms EVM and peak EVM as functions of average load power; typical values Fig 8. GSM EDGE ACPR and rms EVM as functions of drain efficiency; typical values BLF4G10-160_1 Product data sheet 20 © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 5 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 001aag554 20 Gp (dB) 40 ηD (%) Gp Gp (dB) 30 19 001aag555 20 1 19 2 3 18 20 18 10 17 ηD 17 16 28 32 36 0 44 48 PL(AV) (dBm) 40 16 28 VDS = 28 V; IDq = 1100 mA; f = 881.5 MHz. Test signal: IS-95 with PAR = 9.9 dB at 0.01 % probability. 32 36 40 44 48 PL(AV) (dBm) VDS = 28 V; IDq = 1100 mA. (1) f = 869 MHz. (2) f = 881.5 MHz. (3) f = 894 MHz. Fig 9. CDMA power gain and drain efficiency as functions of average load power; typical values, measured in a CDMA demo test circuit Fig 10. CDMA power gain as a function of average load power at various frequencies; typical values, measured in a CDMA demo test circuit 001aag556 −35 ACPR (dBc) −45 −55 ACPR750 −65 ACPR1980 −75 28 32 36 40 44 48 PL(AV) (dBm) VDS = 28 V; IDq = 1100 mA; Tcase = 25 °C; f = 881.5 MHz. Fig 11. CDMA ACPR at 750 kHz and at 1980 kHz as functions of average load power; typical values, measured in a CDMA demo test circuit BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 6 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 8. Test information VDD Vbias C6 R1 C7 L5 C8 C9 C10 L6 C5 L4 L7 L3 RF in L1 C1 L8 L9 L2 C4 L10 RF out C3 C2 001aag557 See Table 8 for a list of components Fig 12. Circuit schematic for 894 MHz production test circuit +Vbias VDD L6 C7 C8 C9 C10 L5 C6 C5 L1 C1 R1 L2 L10 L3 L4 L7 L8 C2 C3 L9 C4 BLF4G10-160 Input-Rev1 BLF4G10-160 Output-Rev1 001aag558 The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.635 mm. See Table 8 for a list of components. Fig 13. Component layout for 894 MHz production test circuit BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 7 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor Table 8. List of components (see Figure 12 and Figure 13). Component Description Value C1, C4, C6, C7 multilayer ceramic chip capacitor 68 pF C2 multilayer ceramic chip capacitor 1.5 pF [1] C3 multilayer ceramic chip capacitor 1.4 pF [1] C5, C9 tantalum capacitor 10 µF C8 ceramic capacitor 1 µF C10 electrolytic capacitor 220 µF L1 stripline - [2] (W × L) 0.914 mm × 10.160 mm L2 stripline - [2] (W × L) 0.914 mm × 24.384 mm (W1 × W2 × L) 0.914 mm × 19.812 mm × 11.024 mm 1812X7R105KL2AB L3 tapered stripline - [2] L4 stripline - [2] (W × L) 19.812 mm × 21.438 mm L5 stripline - [2] (W × L) 0.914 mm × 42.342 mm - [2] (W × L) 1.524 mm × 42.418 mm - [2] (W × L) 17.221 mm × 22.479 mm (W1 × W2 × L) 17.221 mm × 0.914 mm × 20.625 mm L6 L7 stripline stripline L8 tapered stripline - [2] L9 stripline - [2] (W × L) 0.914 mm × 19.126 mm [2] (W × L) 0.914 mm × 6.858 mm L10 stripline - R1 SMD resistor 5.1 Ω [1] American Technical Ceramics type 100B or capacitor of same quality. [2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.635 mm. BLF4G10-160_1 Product data sheet Remarks [1] © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 8 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor Vbias(12 V - 28 V) Q1 R1 R2 R3 R4 C3 C4 VDD(28 V) R6 C6 R5 R10 R9 R7 R8 C8 L5 C9 C7 L4 L7 L3 L8 Q3 C1 L1 C11 C5 Q2 RF in C10 L6 L2 L9 C12 L10 RF out C2 001aag559 See Table 9 for a list of components Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit Vbias(12 V - 28 V) Q1 C3 C4 R1 VDD(28 V) R9 Q2 L6 C8 R10 R6 C9 C10 R5 R7 C11 C6 L5 R2 R8 R3 L1 C1 Q3 C7 R4 C5 L2 L10 L3 L4 L7 L8 L9 C12 C2 BLF4G10-160 CDMA in BLF4G10-160 CDMA out 001aag560 The other side is unetched and serves as a ground plane. See Table 9 for a list of components. Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 9 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor Table 9. List of components (see Figure 14 and Figure 15). Component Description Value C1, C6, C8 multilayer ceramic chip capacitor 68 pF C2, C7 multilayer ceramic chip capacitor 1.3 pF [1] C3, C4 ceramic capacitor 100 nF C5, C10 tantalum capacitor 10 µF C9 ceramic capacitor 1 µF C11 electrolytic capacitor 2200 µF C12 multilayer ceramic chip capacitor 18 pF [1] L1 stripline - [2] (W × L) 0.914 mm × 10.160 mm - [2] (W × L) 0.914 mm × 24.384 mm (W1 × W2 × L) 0.914 mm × 19.812 mm × 11.024 mm L2 stripline L3 tapered stripline - [2] L4 stripline - [2] (W × L) 19.812 mm × 21.438 mm - [2] (W × L) 0.914 mm × 42.342 mm - [2] (W × L) 1.524 mm × 42.418 mm (W × L) 17.221 mm × 22.479 mm L5 stripline L6 stripline L7 stripline - [2] L8 tapered stripline - [2] (W1 × W2 × L) 17.221 mm × 0.914 mm × 20.625 mm L9 stripline - [2] (W × L) 0.914 mm × 19.126 mm [2] (W × L) 0.914 mm × 6.858 mm L10 stripline - R1, R2 SMD resistor 430 Ω R3 SMD resistor 300 Ω R4 potentiometer 200 Ω R5 SMD resistor 2 kΩ R6 SMD resistor 1.1 kΩ R7 SMD resistor 11 kΩ R8 SMD resistor 5.1 Ω R9 SMD resistor 5.1 kΩ R10 SMD resistor 910 Ω Q1 voltage regulator - 78L08 Q2 transistor - 2N2222 Q3 BLF4G10-160 - [1] American Technical Ceramics type 100B or capacitor of same quality. [2] The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.635 mm. BLF4G10-160_1 Product data sheet Remarks [1] © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 10 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 16. Package outline SOT502A BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 11 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CDMA Code Division Multiple Access CW Continuous Waveform EDGE Enhanced Data GSM Environment EVM Error Vector Magnitude GSM Global System for Mobile communications IS-95 CDMA Interim Standard 95 LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency RMS Root Mean Square SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF4G10-160_1 20070622 Product data sheet - - BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 12 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF4G10-160_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 22 June 2007 13 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 June 2007 Document identifier: BLF4G10-160_1