STMICROELECTRONICS BTB04

BTB04-600SL
®
STANDARD 4A TRIAC
MAIN FEATURES
A2
Symbol
Value
Unit
IT(RMS)
4
A
VDRM / VRRM
600
V
IGT(Q1)
10
mA
G
A1
A2
DESCRIPTION
The BTB04-600SL 4 quadrants TRIAC is intended
for general purpose applications where high surge
current capability is required, such as lighting,
corded power tools, industrial.
This TRIAC features a gate current capability
sensitivity of 10mA.
A1
A2
G
TO-220AB
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I2t
Parameter
A
F = 50 Hz
t = 20 ms
35
A
F = 60 Hz
t = 16.7 ms
38
tp = 10ms
6
A2s
50
A/µs
4
A
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25°C)
I2t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
IGM
Peak gate
Tstg
Tj
Unit
4
TO-220AB
dI/dt
PG(AV)
Value
Tc = 105°C
RMS on-state current (full sine wave)
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
March 2002 - Ed: 1A
Repetitive F = 100Hz
tp = 20µs
Tj = 125°C
Tj = 125°C
0.5
W
-40 to +150
-40 to +125
°C
1/5
BTB04-600SL
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
IGT (1)
Test conditions
VD = 12V
VGT
VD = 12V
VGD
VD = VDRM
IH(2)
IT = 100mA
IL
IG = 1.2IGT
Quadrant
RL = 30Ω
RL = 30Ω
RL = 3.3kΩ
Tj = 125°C
(dV/dt)c (2)
Unit
mA
I - II - III
MAX.
10
IV
MAX.
25
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
15
mA
MAX.
15
mA
I - III - IV
II
dV/dt (2)
Value
25
VD = 67% VDRM gate open Tj = 125°C
MIN.
75
V/µs
(dI/dt)c = 1.8A/ms
MIN.
10
V/µs
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
VTM (2)
Test Conditions
Value
Unit
ITM = 5A tp = 380µs
Tj = 25°C
MAX.
1.5
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
100
mΩ
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MAX.
5
1
µA
mA
VTO
(2)
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
THERMAL RESISTANCE
Symbol
2/5
Parameter
Value
Unit
Rth (j-c)
Junction to case (AC)
3
°C/W
Rth (j-a)
Junction to ambient
60
°C/W
BTB04-600SL
PRODUCT SELECTOR
Part Number
Voltage
Sensitivity
Type
Package
BTB04-600SL
600V
10 mA
Standard
TO-220AB
ORDERING INFORMATION
BT
B
04
-
600
SL
S: SENSITIVITY = 10mA
L: LIGHTING APPLICATION
TRIAC SERIES
INSULATION
B: non insulated
VOLTAGE: 600V
CURRENT: 4A
Fig. 1: Maximum power dissipation versus RMS
on-state current
Fig. 2: RMS on-state current versus case
temperature.
P(W)
IT(RMS)(A)
5
5.0
α=180°
α=180°
4.5
4.0
4
3.5
3.0
3
2.5
2.0
2
1.5
180°
1
IT(RMS)(A)
1.0
α
α
0.5
Tc(°C)
0.0
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25
50
75
100
125
4.0
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: On-state characteristics (maximum values)
ITM(A)
K = [Zth/Rth]
100
1.E+00
Tj=25°C
Zth(j-c)
Tj=125°C
1.E-01
Zth(j-a)
10
1.E-02
1.E-03
1.E-03
Tj max. :
Vto = 0.85 V
Rd = 100 mW
VTM(V)
tp(s)
1
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
1
2
3
4
5
6
7
8
9
10
3/5
BTB04-600SL
Fig. 5: Surge peak on-state current versus number
of cycles.
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I2t.
ITSM(A), I2t (A2s)
ITSM(A)
40
1000
Tj initial=25°C
35
t=20ms
Non repetitive
Tj initial=25°C
30
100
25
dI/dt limitation:
50A/µs
ITSM
20
Repetitive
Tc=110°C
15
10
I²t
10
5
tp(ms)
Number of cycles
0
1
10
100
1
0.01
1000
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junction temperature (typical values).
0.10
1.00
10.00
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
3.0
1.8
2.5
1.6
1.4
2.0
IGT
1.2
1.0
1.5
0.8
IH & IL
1.0
0.6
0.4
0.5
0.2
Tj(°C)
dV/dt (V/µs)
0.0
0.0
-40 -30 -20 -10
0
0.1
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
1.0
10.0
100.0
Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
dV/dt [Tj] / dV/dt [Tj = 125°C]
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
8
7
7
6
6
5
5
4
4
3
3
2
2
VD=VR=400V
1
1
Tj(°C)
0
Tj(°C)
0
25
4/5
50
75
100
125
25
50
75
100
125
BTB04-600SL
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
M
G1
E
G
Inches
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
F
Millimeters
Min.
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam.
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
OTHER INFORMATION
Ordering type
Marking
Package
Weight
Base qty
Packing mode
BTB04-600SL
BTB04-600SL
TO-220AB
2.3 g
50
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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