CM600HA-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Single IGBT A-Series Module 600 Amperes/1200 Volts H E F G D J W - DIA. (4 TYP.) K C E Y Y Z N C E X AE AG AF G P Q M L AB AA K C AF AH AJ D B R A Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. U - THD. (2 TYP.) V -THD. (2 TYP.) AD S T AC E C E G Outline Drawing and Circuit Diagram DimensionsInches A 4.25 B 3.66±0.01 C 0.63 D 0.30 E 0.69 F 1.14 G 0.79 H 0.94 J 0.55 K 0.24 L 2.44 M 1.89±0.01 N 0.39 P 0.39 Q 0.51 R 0.33 S 1.42+0.04/-0.02 Millimeters 108.0 93.0±0.25 16.0 7.5 17.5 29.0 20.0 24.0 13.9 6.0 62.0 48.0±0.25 10.0 20.0 23.0 8.5 36.0+1/-0.5 DimensionsInches T 1.02+0.04/-0.02 U M6 Metric V M4 Metric W 0.256 Dia. X 0.79 Y 0.35 Z 0.43 AA 0.53 AB 0.27 AC 0.98 AD 1.38 AE 0.45 AF 0.25.0 AG 0.25 AH 0.12 AJ 0.32 Millimeters 25.8+1/-0.5 M6 M4 6.5 Dia. 20.0 9.0 11.0 13.55 7.0 25.0 35.0 11.5 6.5 3.2 8.2 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Chopper £ Inverter £UPS £Forklift Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA-24A is a 1200V (VCES), 600 Ampere Single IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM600 24 06/13 Rev. 2 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 80°C)*2,*4IC Collector Current (Pulse, 600Amperes Repetitive)*3I CRM 1200Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 3670Watts Emitter Current*2 IE*1 Emitter Current (Pulse, Repetitive)*3 600Amperes IERM*1 1200Amperes Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO2500Volts Storage Temperature Tstg -40 ~ +125 °C 74.7 0 0 21.9 Tr1 Di1 Di1 Tr1 19.8 34.6 Tr1 Di1 Di1 Tr1 32.5 67.3 27.2 0 Tr1 Di1 44.8 Di1 Tr1 76.5 47.3 36.4 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 The device junction temperature is Tj(max) rating (150°C) or less. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) is measured on the surface of the baseplate just under the chip. Refer to the figure to the right for chip location. 84.3 °C 33.7 -40 ~ +150 23.7 Tj 0 Junction Temperature LABEL SIDE Each mark points to the center position of each chip. Tr1: IGBT 2 Di1: FWDi 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 1.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6 7 8 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*5 — 2.1 3.0 Volts IC = 600A, VGE = 15V, Tj = 125°C*5 Forward Transfer Admittance |γfs| Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time — Volts — — S — — 105 nF — — 9.0 nF 180 VCE = 10V, VGE = 0V — — 2.0 nF VCC = 600V, IC = 600A, VGE = 15V — 3000 — nC — — 660 ns tr VCC = 600V, IC = 600A, VGE = ±15V, — — 190 ns td(off) RG = 0.52Ω, Inductive Load — — 700 ns — — 350 ns td(on) tf *1 Emitter-Collector Voltage VEC Reverse Recovery Time trr*1 Reverse Recovery Charge —2.4 IC = 600A, VCE = 10V*5 IE = 600A, VGE = — 3.0 3.8 Volts VCC = 600V, IE = 600A, VGE = ±15V — — 250 ns RG = 0.52Ω, Inductive Load — 19 — µC TC = 25°C — 1.0 — Ω 0.52 — 7.8 Ω *1 Qrr Internal Gate Resistance rg External Gate Resistance RG 0V*5 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 06/13 Rev. 2 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts Thermal Resistance Characteristics Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Symbol Test Conditions Rth(j-c)Q IGBT Part*4 Rth(j-c)D Part*4 FWDi Rth(c-f) Min. Thermal Grease Applied, Case to Heatsink Per 1 Typ. Max. Units — — 34 K/kW — — 53 K/kW — 15 — K/kW Module*4,*7 Mechanical Characteristics Mounting Torque Mt Main Terminal, M6 Screw 17 22 26 in-lb Mounting Torque Mt G/E Auxiliary Terminals 8 10 13 in-lb Mounting Torque Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb On Centerline X, Y*6 ±0 +100 µm – CONCAVE + CONVEX 84.3 g 0 34.6 47.3 BOTTOM — 0 21.9 Y 74.7 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 480 33.7 ec 23.7 m Flatness of Baseplate 0 Weight Tr1 Di1 Di1 Tr1 19.8 Tr1 Di1 Di1 Tr1 32.5 Tr1 Di1 44.8 Di1 Tr1 3 mm HEATSINK SIDE HEATSINK SIDE 4 – CONCAVE 67.3 76.5 27.2 36.4 0 X LABEL SIDE Each mark points to the center position of each chip. Tr1: IGBT Di1: FWDi + CONVEX 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 4 Tj = 25°C 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1200 15 900 12 600 11 300 10 9 0 0 2 4 6 8 3 2 1 0 10 VGE = 15V Tj = 25°C Tj = 125°C 1200 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25°C 8 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 900 104 10 IC = 1200A 6 IC = 600A IC = 240A 4 2 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 06/13 Rev. 2 600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 300 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 20 103 102 Tj = 25°C Tj = 125°C 101 0 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 101 Coes Cres 100 td(off) tf td(on) Cies SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 102 tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load VGE = 0V 10-1 10-1 101 101 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 25°C Inductive Load 102 Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 6 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr, trr, (ns) 103 100 103 IC = 600A 16 VCC = 400V VCC = 600V 12 8 4 0 0 900 1800 2700 3600 4500 GATE CHARGE, QG, (nC) 06/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600HA-24A Single IGBT A-Series Module 600 Amperes/1200 Volts SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 103 SWITCHING LOSS, (mJ/PULSE) SWITCHING LOSS, (mJ/PULSE) 102 Err Eoff 101 Eon NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 100 101 100 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 10-3 10-1 10-2 10-3 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load Eon 102 Eoff Err 103 101 0 2 4 6 GATE RESISTANCE, RG, (Ω) 8 10 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) Rth(j-c) = 0.051°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 06/13 Rev. 2 7