VISHAY 16CTU04PBF

VS-16CTU04PbF
Vishay Semiconductors
Ultrafast Rectifier, 16 A FRED Pt®
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
TO-220AB
• Compliant to RoHS Directive 2002/95/EC
2
Common
cathode
Anode
• Designed and qualified for industrial level
Anode
1
3
DESCRIPTION/APPLICATIONS
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as
well as freewheeling diode in low voltage inverters and
chopper motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-220AB
IF(AV)
2x8A
VR
400 V
VF at IF
1.3 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VRRM
per leg
Average rectified forward current
total device
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
IF(AV)
VALUES
UNITS
400
V
8
TC = 155 °C, rated VR
16
IFSM
TC = 25 °C
100
IFRM
TC = 155 °C, rated VR, square wave, 20 kHz
TJ, TStg
A
16
- 65 to 175
°C
UNITS
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
IR = 100 μA
IF = 8 A
MIN.
TYP.
MAX.
400
-
-
-
1.19
1.3
IF = 8 A, TJ = 150 °C
-
0.94
1.0
VR = VR rated
-
0.2
10
TJ = 150 °C, VR = VR rated
-
20
500
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
14
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Document Number: 94008
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTU04PbF
Ultrafast Rectifier, 16 A FRED Pt®
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V
TJ = 25 °C
-
35
60
-
43
-
-
67
-
-
2.8
-
-
6.3
-
TJ = 25 °C
-
60
-
TJ = 125 °C
-
210
-
MIN.
TYP.
MAX.
UNITS
- 65
-
175
°C
-
3.6
4
-
1.8
2
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
IF = 8 A
dIF/dt = 200 A/μs
VR = 200 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
per leg
per device
TEST CONDITIONS
TJ, TStg
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
50
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf in)
Weight
6.0
(5.0)
Mounting torque
Marking device
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Case style TO-220AB
°C/W
g
16CTU04
For technical questions within your region, please contact one of the following:
Document Number: 94008
[email protected], [email protected], [email protected]
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTU04PbF
Ultrafast Rectifier, 16 A FRED Pt®
1000
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
100
Vishay Semiconductors
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
0.1
0
0.5
1
1.5
2
100
TJ = 175 °C
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0001
2.5
0
100
200
300
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
200
300
400
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94008
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTU04PbF
Ultrafast Rectifier, 16 A FRED Pt®
Vishay Semiconductors
90
70
DC
160
Square wave (D = 0.50)
Rated VR applied
150
60
50
40
140
30
See note (1)
130
0
2
4
6
8
10
VR = 200 V
TJ = 125 °C
TJ = 25 °C
20
100
12
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
14
500
400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
350
IF = 16 A
450
12
10
RMS limit
8
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
6
4
2
2
4
6
8
10
300
IF = 8 A
250
200
150
100
50
0
0
Qrr (nC)
Average Power Loss (W)
If = 16 A
If = 8 A
80
170
trr (ns)
Allowable Case Temperature (°C)
180
12
0
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions within your region, please contact one of the following:
Document Number: 94008
[email protected], [email protected], [email protected]
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTU04PbF
Ultrafast Rectifier, 16 A FRED Pt®
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94008
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-16CTU04PbF
Ultrafast Rectifier, 16 A FRED Pt®
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
16
C
T
U
04
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (16 = 16 A)
3
-
Circuit configuration:
C = Common cathode
4
4
-
Package:
T = TO-220
4
5
-
Ultrafast recovery
6
-
Voltage rating (04 = 400 V)
7
-
PbF = Lead (Pb)-free
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
Part marking information
www.vishay.com/doc?95225
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For technical questions within your region, please contact one of the following:
Document Number: 94008
[email protected], [email protected], [email protected]
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
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Disclaimer
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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