FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Limit Typ. Max. Unit Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. VDS = 5V, VGS = 0V - 6000 9000 mA Transconductance gm VDS = 5V, IDS = 3600mA - 5000 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 300mA -0.5 -1.5 -3.0 V -5 - - V 39.5 40.5 - dBm 5.0 6.0 - dB - 3600 4500 mA - 25 - % - - ±0.6 dB -42 -45 - dBc 2.6 °C/W 80 °C Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr ηadd IGS = -340µA VDS = 10V f = 10.7 ~ 11.7 GHz IDS = 0.6 IDSS(Typ.) ZS = ZL = 50Ω Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 29.5 dBm S.C.L. Thermal Resistance Rth Channel to Case - 2.3 ∆Tch 10V x Idsr x Rth - - Channel Temperature Rise CASE STYLE: IB Edition 1.3 August 2004 G.C.P.: Gain Compression Point 1 FLM1011-12F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER Output Power (S.C.L.) (dBc) 60 45 30 15 33 VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test Pout 31 -20 29 -30 IM3 27 -40 -50 25 50 100 150 200 19 Case Temperature (°C) 29 OUTPUT POWER vs. INPUT POWER 32dBm 36 30dBm 34 28dBm 32 26dBm 30 24dBm 28 22dBm 39 Output Power (dBm) 38 VDS=10V f = 11.2 GHz 37 35 Pout 33 40 31 30 29 11.4 11.6 11.8 20 ηadd 20dBm 11.2 27 Pin=36dBm 34dBm 11.1 25 41 P1dB 40 10.8 23 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V, 21 10 27 Frequency (GHz) 24 26 28 30 Input Power (dBm) 2 32 34 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (W) 35 IM3 (dBc) POWER DERATING CURVE FLM1011-12F X, Ku-Band Internally Matched FET S11 S22 +j100 +j25 10.5 GHz 10.7 11.1 11.9 0 10 11.7 0.1 +j250 10.9 +j10 50Ω 11.3 11.5 11.5 11.3 11.7 10.9 11.9 11.1 10.5 GHz 250 10.7 180° 5 4 3 2 10.7 10.9 1 0° 10.7 SCALE FOR |S21| 10.9 11.1 11.1 11.3 11.3 11.5 11.7 11.5 11.9 11.9 11.7 -j250 -j100 -90° -j50 FREQUENCY (MHZ) 10.5 GHz 10.5 GHz -j10 -j25 S21 S12 +90° 0.2 SCALE FOR |S12| +j50 S11 S-PARAMETERS VDS = 10V, IDS = 3600mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 10500 .575 98.6 2.142 44.3 .054 23.7 .389 6.8 10600 .549 87.9 2.158 36.2 .065 19.5 .362 -3.3 10700 .522 77.4 2.223 28.8 .066 3.2 .315 -14.9 10800 .487 66.0 2.316 18.9 .074 -1.4 .278 -29.5 10900 .457 55.0 2.337 8.9 .078 -14.3 .247 -44.1 11000 .421 43.3 2.326 -1.7 .083 -19.7 .222 -61.7 11100 .387 31.8 2.263 -11.0 .085 -32.4 .200 -78.4 11200 .355 19.5 2.257 -19.0 .086 -38.8 .180 -98.7 11300 .321 7.4 2.282 -27.7 .089 -47.0 .162 -116.7 11400 .292 -5.8 2.302 -37.1 .092 -55.5 .148 -137.7 11500 .265 -20.2 2.269 -47.2 .093 -61.9 .136 -161.2 11600 .240 -37.0 2.247 -56.4 .092 -70.6 .136 177.0 11700 .219 -55.9 2.235 -66.2 .098 -78.0 .139 155.0 11800 .205 -78.7 2.204 -77.3 .097 -86.7 .137 133.9 11900 .211 -103.2 2.117 -87.2 .101 -96.5 .137 111.5 3 MAG ANG FLM1011-12F X, Ku-Band Internally Matched FET 2.0 Min. (0.079) Case Style "IB" Metal-Ceramic Hermetic Package 1 2-R 1.6±0.15 (0.063) 0.1 (0.004) 12.9±0.2 (0.508) 2 3 2.6±0.15 (0.102) 2.0 Min. (0.079) 0.6 (0.024) 5.2 Max. (0.205) 1.45 (0.059) 0.2 Max. (0.008) 10.7 (0.421) 1. Gate 2. Source (Flange) 3. Drain 12.0 (0.422) Unit: mm(inches) 17.0±0.15 (0.669) 21.0±0.15 (0.827) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4