GTM GBC817

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GBC817
NP N E PITAX I AL P L ANAR T RANS ISTO R
Description
The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVEBO
5
-
-
V
IE=-100uA
BVCEO
45
-
-
V
IC=10mA
BVCES
50
-
-
V
IC=100uA
ICES
-
-
100
nA
VCE=25V
IEBO
-
-
100
nA
VEB=4V
*VCE(sat)
-
-
700
mV
IC=500mA, IB=50mA
VBE(on)
-
-
1.2
V
VCE=1V, IC=300mA
hFE
100
-
630
fT
-
100
-
MHz
Cob
-
-
12
pF
Test Conditions
VCE=1V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
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Classification Of hFE
Rank
hFE
A
100-250
B
160-400
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165
C
250-630