RENESAS HAF1002

HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series
Power Switching
REJ03G1133-0200
(Previous: ADE-208-586)
Rev.2.00
Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
•
•
•
•
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1
1
2
3
D
Gate resistor
G
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shutdown
Circuit
S
Rev.2.00 Sep 07, 2005 page 1 of 8
1. Gate
2. Drain
3. Source
4. Drain
2
3
HAF1002(L), HAF1002(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Value
–60
Unit
V
VGSS
VGSS
–16
3
V
V
ID
Note 1
ID (pulse)
–15
–30
A
A
IDR
Note 2
Pch
–15
50
A
W
Tch
Tstg
150
–55 to +150
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Rev.2.00 Sep 07, 2005 page 2 of 8
Symbol
VIH
Min
–3.5
Typ
—
Max
—
Unit
V
Test Conditions
VIL
IIH1
—
—
—
—
–1.2
–100
V
µA
Vi = –8 V, VDS = 0
IIH2
IIL
—
—
—
—
–50
–1
µA
µA
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
IIH (sd) 1
IIH (sd) 2
—
—
–0.8
–0.35
—
—
mA
mA
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Tsd
VOP
—
–3.5
175
—
—
–13
°C
V
Channel temperature
HAF1002(L), HAF1002(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
Min
–7
Typ
—
Max
—
Unit
A
Test Conditions
VGS = –3.5 V, VDS = –2 V
ID2
—
—
–10
—
mA
V
VGS = –1.2 V, VDS = –2 V
ID = –10 mA, VGS = 0
Drain to source breakdown voltage
V (BR) DSS
—
–60
Gate to source breakdown voltage
V (BR) GSS
V (BR) GSS
–16
3
—
—
—
—
V
V
IG = –100 µA, VDS = 0
IG = 100 µA, VDS = 0
IGSS1
IGSS2
—
—
—
—
–100
–50
µA
µA
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
IGSS3
IGSS4
—
—
—
—
–1
100
µA
µA
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
Input current (shut down)
IGS (op) 1
IGS (op) 2
—
—
–0.8
–0.35
—
—
mA
mA
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
–1.1
—
—
–250
–2.25
µA
V
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
RDS (on)
—
—
100
70
130
90
mΩ
mΩ
ID = –7.5 A, VGS = –4 V
Note 3
ID = –7.5 A, VGS = –10 V
Forward transfer admittance
Output capacitance
|yfs|
Coss
5
—
10
610
—
—
S
pF
Turn-on delay time
td (on)
—
7.5
—
µs
Rise time
Turn-off delay time
tr
td (off)
—
—
36
32
—
—
µs
µs
ID = –7.5 A, VDS = –10 V
VDS = –10 V, VGS = 0
f = 1 MHz
ID = –7.5 A
VGS = –5 V
RL = 4 Ω
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
29
–1.0
—
—
µs
V
trr
—
200
—
ns
tos1
—
3.7
—
ms
IF = –15 A, VGS = 0
diF/dt = 50 A/µs
VGS = –5 V, VDD = –12 V
tos2
—
1
—
ms
VGS = –5 V, VDD = –24 V
Gate to source leak current
Body-drain diode reverse recovery time
Over load shut down operation time
Note4
Note 3
Note 3
IF = –15 A, VGS = 0
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.2.00 Sep 07, 2005 page 3 of 8
HAF1002(L), HAF1002(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–500
Thermal shut down
Operation area
60
40
20
ID (A)
–200
–100
Drain Current
Channel Dissipation
Pch (W)
80
–20
50
100
150
Case Temperature
10
DC
–10
–5
–2
–1
200
=
m
10
µs
s
m
s
(T
c=
25
°C
)
–5 –10 –20
–50 –100
Typical Transfer Characteristics
–20
–6 V
–30
–5 V
–20
–4 V
–10
VGS = –3 V
–3.5 V
ID (A)
–8 V
–40
0
–2
–4
–6
Drain to Source Voltage
–8
0
–1.2
ID = –10 A
–5 A
–0.4
–2 A
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 4 of 8
–1
–2
–3
–4
Gate to Source Voltage
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
–1.6
0
–4
0
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.8
–8
VDS (V)
Pulse Test
25°C
75°C
–10
–2.0
Tc = –25°C
VDS = –10 V
Pulse Test
Pulse Test
0
–16
–12
Drain Current
–10 V
ID (A)
ion
1
0
Drain to Source Voltage VDS (V)
Tc (°C)
–50
Drain Current
at
Operation in this area
is limited by RDS (on)
Typical Output Characteristics
Drain to Source Saturation Voltage
VDS (on) (V)
PW
Op
er
–0.5 Ta = 25°C
–0.3
–0.3 –0.5 –1 –2
0
0
20 µs
–50
0.5
Pulse Test
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–0.1 –0.2 –0.5 –1 –2
Drain Current
–5 –10 –20 –50
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
ID = –10 A
0.16
–5 A
VGS = –4 V
0.12
–2 A
–10 A
0.08
–2, –5 A
–10 V
0.04
Pulse Test
0
–40
0
40
80
Case Temperature
120
160
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAF1002(L), HAF1002(S)
50
VDS = –10 V
Pulse Test
20
Tc = –25°C
10
5
25°C
75°C
2
1
0.5
–0.1 –0.2 –0.5 –1 –2
Tc (°C)
Drain Current ID (A)
Switching Characteristics
100
500
td(off)
50
Switching Time t (µs)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
–0.1 –0.2 –0.5 –1 –2
tf
tr
20
10
td(on)
5
2
1
VGS = –5 V, VDD = –30 V
PW = 300 µs, duty ≤ 1 %
0.5
–0.1 –0.2 –0.5 –1 –2
–5 –10 –20 –50
Reverse Drain Current
IDR (A)
10000
Pulse Test
–16
VGS = –5 V
–12
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Capacitance Coss (pF)
Reverse Drain Current IDR (A)
–20
–5 –10 –20 –50
Drain Current
Reverse Drain Current vs.
Source to Drain Voltage
0V
–8
–4
0
–5 –10 –20 –50
3000
1000
300
VGS = 0
f = 1 MHz
100
0
–0.4
–0.8
–1.2
Source to Drain Voltage
Rev.2.00 Sep 07, 2005 page 5 of 8
–1.6
–2.0
VSD (V)
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
HAF1002(L), HAF1002(S)
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
–12
–10
VDD = –36 V
–8
–24 V
–12 V
–9 V
–6
–4
–2
0
0.0001
0.001
0.01
0.1
1
200
180
160
140
120
ID = –5 A
100
0
–2
–4
–6
–8
Gate to Source Voltage
Shutdown Time of Load-Short Test PW (S)
–10
VGS (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
θch – c = 2.50°C/W, Tc = 25°C
0.1 0.1
0.05
0.03
0.0
1
1s
D=
PDM
2
0.0
h
p
ot
uls
0.01
10 µ
e
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–5 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.2.00 Sep 07, 2005 page 6 of 8
10%
tr
10%
td(off)
tf
HAF1002(L), HAF1002(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
Unit: mm
1.30g
(1.5)
10.0
Rev.2.00 Sep 07, 2005 page 7 of 8
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.7
SC-83
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.86 +– 0.1
JEITA Package Code
Unit: mm
2.2
HAF1002(L), HAF1002(S)
Ordering Information
Part Name
Quantity
Shipping Container
HAF1002-90L
HAF1002-90S
Max: 50 pcs/sack
Max: 50 pcs/sack
Sack
Sack
HAF1002-90STL
HAF1002-90STR
1000 pcs/Reel
1000 pcs/Reel
Embossed tape
Embossed tape
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0