HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs June 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive EMITTER COLLECTOR GATE • Internal Voltage Clamp • ESD Gate Protection COLLECTOR (FLANGE) o • TJ = 175 C • Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLECTOR This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. GATE A COLLECTOR (FLANGE) JEDEC TO-263AB M COLLECTOR (FLANGE) A A PACKAGING AVAILABILITY PART NUMBER PACKAGE GATE BRAND HGTP14N36G3VL TO-220AB 14N36GVL HGT1S14N36G3VL TO-262AA 14N36GVL HGT1S14N36G3VLS TO-263AB 14N36GVL EMITTER Terminal Diagram NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A. N-CHANNEL ENHANCEMENT MODE COLLECTOR The development type number for this device is TA49021. R1 GATE R2 EMITTER Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE = 5V, TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = +100oC. . . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . . .ISCIS at L = 2.3mH, TC = + 175oC . . . . . . . . . . . . . . . . . . . . . .ISCIS Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 ±10 17 12 332 100 0.67 -40 to +175 260 6 UNITS V V A A V A A mJ W W/oC oC oC KV NOTE: May be exceeded if IGEM is limited to 10mA. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 3-55 File Number 4008 Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Gate-Emitter Plateau Voltage Gate Charge SYMBOL BVCER MAX UNITS TC = +175oC 320 355 400 V TC = +25oC 330 360 390 V TC = -40oC 320 350 385 V TC = +25oC - 2.7 - V QG(ON) IC = 7A, VCE = 12V TC = +25oC - 24 - nC IC = 7A RG = 1000Ω TC = +175oC 350 380 410 V IC = 10mA TC = +25oC 24 28 - V VCE = 250V RGE = 1kΩ TC = +25oC - - 25 µA TC = +175oC - - 250 µA TC = +25oC - 1.25 1.45 V TC = +175oC - 1.15 1.6 V TC = +25oC - 1.6 2.2 V TC = +175oC - 1.7 2.9 V TC = +25oC 1.3 1.8 2.2 V Emitter-Collector Breakdown Voltage BVECS ICER VCE(SAT) IC = 7A VGE = 4.5V IC = 14A VGE = 5V Gate-Emitter Threshold Voltage TYP IC = 7A, VCE = 12V BVCE(CL) Collector-Emitter Saturation Voltage IC = 10mA, VGE = 0V RGE = 1kΩ MIN VGEP Collector-Emitter Clamp Breakdown Voltage Collector-Emitter Leakage Current TEST CONDITIONS VGE(TH) IC = 1mA VCE = VGE Gate Series Resistance R1 TC = +25oC - 75 - Ω Gate-Emitter Resistance R2 TC = +25oC 10 20 30 kΩ Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load Inductive Use Test Thermal Resistance IGES VGE = ±10V ±330 ±500 ±1000 µA BVGES IGES = ±2mA ±12 ±14 - V - 7 - µs TC = +175oC 12 - - A TC = +25oC 17 - - A - - 1.5 oC/W tD(OFF)I + tF(OFF)I ISCIS IC = 7A, RL = 28Ω RG = 25Ω, L = 550µH, VCL = 300V, VGE = 5V, TC = +175oC L = 2.3mH, VG = 5V, RθJC 3-56 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V 40 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 25 20 15 10 +25oC +175oC 5 -40oC 10V 30 4.5V 20 4.0V 3.5V 10 3.0V 2.5V 0 0 1 2 3 4 0 5 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) 35 VGE = 5.0V TC = +175oC 30 25 10 FIGURE 2. SATURATION CHARACTERISTICS ICE , COLLECTOR EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS ICE , COLLECTOR EMITTER CURRENT (A) 5.0V VGE = 4.5V 20 VGE = 4.0V 15 10 5 35 -40oC VGE = 4.5V 30 +25oC 25 +175oC 20 15 10 5 0 0 0 1 2 3 4 VCE(SAT) , SATURATION VOLTAGE (V) 5 0 1 2 3 4 5 VCE(SAT) , SATURATION VOLTAGE (V) FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE 1.35 2.25 ICE = 14A VCE(SAT) , SATURATION VOLTAGE (V) VCE(SAT) , SATURATION VOLTAGE (V) ICE = 7A VGE = 4.0V 1.25 VGE = 4.5V 1.15 VGE = 4.0V 2.00 1.75 VGE = 4.5V VGE = 5.0V 1.05 VGE = 5.0V 1.50 -25 +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) -25 +175 +25 +75 +125 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 3-57 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS ICE, COLLECTOR-EMITTER CURRENT (A) 20 VGE(TH), NORMALIZED THRESHOLD VOLTAGE Typical Performance Curves (Continued) VGE = 5V 18 16 14 12 10 8 6 4 2 0 +25 +50 +75 +125 +100 TC, CASE TEMPERATURE (oC) +150 +175 FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF CASE TEMPERATURE 1.2 ICE = 1ma 1.1 1.0 0.9 0.8 0.7 0.6 -25 +25 +75 +125 TJ , JUNCTION TEMPERATURE (oC) +175 FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE 7.0 VCE = 300V, VGE = 5V VECS = 20V 6.5 t(OFF)I, TURN OFF TIME (µs) LEAKAGE CURRENT (µA) 1E4 1E3 1E2 1E1 VCES = 250V RGE = 25Ω, L = 550µH RL = 37Ω, ICE = 7A 6.0 5.5 5.0 4.5 4.0 1E0 3.5 3.0 1E-1 +20 +60 +100 TJ , JUNCTION TEMPERATURE +25 +180 +140 650 25 VGE = 5V +25oC + 75 +100 +125 +150 +175 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. TURN-OFF TIME AS A FUNCTION OF JUNCTION TEMPERATURE FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE VGE = 5V 600 550 20 EAS , ENERGY (mJ) IC , INDUCTIVE SWITCHING CURRENT (A) +50 (oC) o +175 C 15 +25oC 500 450 400 350 300 10 +175oC 250 200 5 0 2 4 6 8 150 10 L, INDUCTANCE (mH) FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING CURRENT AS A FUNCTION OF INDUCTANCE 0 2 4 6 L , INDUCTANCE (mH) 8 10 FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY AS A FUNCTION OF INDUCTANCE 3-58 HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Typical Performance Curves (Continued) VCE, COLLECTOR-EMITTER VOLTAGE (V) FREQUENCY = 1MHz 1800 C, CAPACITANCE (pF) 1600 CIES 1400 1200 1000 800 600 400 COES 200 CRES 0 0 5 10 15 20 12 6 10 5 8 3 6 VCE = 4V 4 2 VCE = 8V 2 1 0 25 0 0 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 15 10 20 25 30 QG, GATE CHARGE (nC) FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS 355 100 BVCER, COLLECTOR-EMITTER BKDN VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE 4 VCE = 12V VGE, GATE-EMITTER VOLTAGE (V) REF IG = 1mA, RL = 1.7Ω, TC = +25oC 2000 0.5 0.2 t1 10-1 0.1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 10-2 10-5 350 345 340 25oC 335 175oC 330 SINGLE PULSE 325 10-4 10-3 10-2 10-1 101 100 2000 0 t1 , RECTANGULAR PULSE DURATION (s) 4000 6000 8000 10000 RGE, GATE-TO- EMITTER RESISTANCE (Ω) FIGURE 15. NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF GATE-EMITTER RESISTANCE Test Circuits RL 2.3mH VDD L = 550µH C RGEN = 25Ω C 1/RG = 1/RGEN + 1/RGE RG DUT 5V RGEN = 50Ω G G DUT - 10V E + RGE = 50Ω E FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING CURRENT TEST CIRCUIT FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME TEST CIRCUIT 3-59 VCC 300V HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Handling Precautions for IGBT’s 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as †“ECCOSORBD LD26” or equivalent. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating -The gate-voltage rating of VGEM may be exceeded if IGEM is limited to 10mA. † Trademark Emerson and Cumming, Inc . INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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