IRFBC40, IRFBC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17426. Ordering Information PART NUMBER PACKAGE BRAND IRFBC40 TO-220AB IRFBC40 IRFBC42 TO-220AB IRFBC42 Symbol D G NOTE: When ordering, include the entire part number. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 2157.2 IRFBC40, IRFBC42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFBC40 IRFBC42 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 600 600 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 600 600 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 6.2 5.4 A TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3.9 3.4 A Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 22 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 125 W Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 W/oC Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . EAS 570 570 mJ Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 o C o C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VGS = 0V, ID = 250µA, (Figure 11) 600 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA IRFBC40 6.2 - - A IRFBC42 5.4 - - A - - ±100 nA IRFBC40 - 0.97 1.2 Ω IRFBC42 - 1.2 1.6 Ω 4.7 70 - S - 13 20 ns - 18 27 ns - 55 83 ns - 20 30 ns - 40 60 nC - 5.5 - nC - 20 - nC - 1300 - pF Drain to Source Breakdown Voltage BVDSS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA Zero Gate Voltage Drain Current On-State Drain Current (Note 4) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = ±20V VGS = 10V, ID = 3.4A, (Figures 9, 10) VDS ≥ 100V, IDS = 3.4A, (Figure 13) VDD = 300V, ID ≈ 6.2A, RG = 9.1Ω, VGS = 10V, RL = 47Ω, (Figures 17, 18) Switching Speeds are Essentially ndependent of Operating Temperature tf Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS, (Figures 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 160 - pF Reverse Transfer Capacitance CRSS - 45 - pF VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 12) 5-2 IRFBC40, IRFBC42 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Internal Drain Inductance LD Internal Source Inductance LS TEST CONDITIONS MIN TYP MAX UNITS - 4.5 - nH - 7.5 - nH - - 1.0 oC/W - - 80 oC/W Measured From the Drain Modified MOSFET Lead, 6mm (0.25in) From Symbol Showing the Package to Center of Die Internal Devices Inductances Measured From the D Source Lead, 6mm LD (0.25in) From Header to Source Bonding Pad G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Typical Socket Mount Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN TYP MAX UNITS - - 6.2 A - - 25 A - - 1.5 V G S Diode Source to Drain Voltage (Note 2) VSD Reverse Recovery Time Reverse Recovery Charge TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 8) trr TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns QRR TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 8.0 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. (Figures 15, 16). Typical Performance Curves Unless Otherwise Specified 10 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 8 6 IRFBC40 2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) IRFBC42 4 25 50 75 100 125 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 5-3 150 IRFBC40, IRFBC42 ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) Typical Performance Curves Unless Otherwise Specified (Continued) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.02 0.01 PDM SINGLE PULSE 10-2 t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-5 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 10 10µs 10 IRFBC40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRFBC40 IRFBC42 100µs IRFBC42 1ms 1 10ms TC = 25oC TJ = MAX RATED 1 VGS = 10V 8 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 VGS = 5.0V 4 VGS = 4.5V 2 VGS = 4.0V 0 103 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 10 VGS =10V 10 VGS = 6.0V VGS = 5.5V 8 6 VGS = 5.0V 4 2 VGS = 4.5V VGS = 4.0V 0 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 FIGURE 5. OUTPUT CHARACTERISTICS ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80µs PULSE TEST VGS = 5.5V VGS = 6.0V DC SINGLE PULSE 0.1 80µs PULSE TEST OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 1 TJ = 150oC FIGURE 6. SATURATION CHARACTERISTICS TJ = 25oC 0.1 10-2 0 15 VDS ≥ 100V 80µs PULSE TEST 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 5-4 10 IRFBC40, IRFBC42 Typical Performance Curves Unless Otherwise Specified (Continued) 5.0 DRAIN TO SOURCE ON RESISTANCE ISD, SOURCE TO DRAIN CURRENT (A) 102 10 TJ = 150oC TJ = 25oC 1 80µs PULSE TEST 4.0 3.0 VGS = 10V 2.0 1.0 0 0.1 0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 0 1.5 FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE 1.25 ID = 3.4A VGS = 10V NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 6 2.4 1.8 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 30 1.15 1.05 0.95 0.85 0.75 -60 100 120 140 160 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 10 3000 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1800 24 ID = 250µA TJ, JUNCTION TEMPERATURE (oC) 2400 12 18 ID, DRAIN CURRENT (A) FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 3.0 C, CAPACITANCE (pF) VGS = 20V CISS 1200 COSS 600 VDS ≥ 100V 80µs PULSE TEST TJ = 25oC 8 TJ = 150oC 6 4 2 CRSS 0 0 2 10 20 50 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 102 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 0 2 4 6 ID, DRAIN CURRENT (A) 8 FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT 5-5 10 IRFBC40, IRFBC42 Typical Performance Curves Unless Otherwise Specified (Continued) GATE TO SOURCE VOLTAGE (V) 20 ID = 6.2A FOR TEST CIRCUIT, SEE FIGURES 19, 20 16 VDS = 120V VDS = 240V 12 VDS = 360V 8 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP IAS 0V 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 10% 50% 50% PULSE WIDTH FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT 5-6 IRFBC40, IRFBC42 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7