ISAHAYA ISC3244AS1

〈SMALL-SIGNAL TRANSISTOR〉
ISC3244AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
ISC3244AS1 is a silicon NPN epitaxial type transistor
4.0
designed with high collector dissipation, high voltage.
3.0
7.5MAX
Complementary with ISA1284AS1.
1.0
0.1
●High gain band width product.
ICM=800mA
1.0
VCEo=100V
14.0
●High voltage.
●High peak collector current.
13.0MIN
FEATURE
0.45
fT=130MHz (typ)
2.5
2.5
2.5
0.4
●High collector dissipation. PC=600mW
①
②
③
APPLICATION
Drive for 20 to 40W amplifier, relay drive, power supply
application.
JEITA:
JEDEC:
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
.
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
②:COLLECTOR
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
100
5
100
500
800
600
+150
-55~+150
V
V
V
mA
mA
mW
℃
℃
③:BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
V(BR)CBO
C to B break down voltage
IC= 10μA , IE =0mA
100
-
-
V
V(BR)EBO
E to B break down voltage
IE= 10μA , IC =0mA
5
-
-
V
V(BR)CEO
C to E break down voltage
IC= 1mA , RBE= ∞
100
-
-
V
ICBO
Collector cut off current
V
CB
-
-
0.5
μA
IEBO
Emitter cut off current
V
EB=2V , I C= 0mA
-
-
0.5
μA
hFE※
DC forward current gain
V
CE
= 10V , IC= 10mA
55
-
300
-
VCE(sat)
fT
Cob
= 50V , I E= 0mA
C to E Saturation Voltage
I C=150mA , I B= 15mA
-
0.15
0.5
V
Gain band width product
V
-
130
-
MHz
Collector output capacitance
VCB= 10V , IE= 0mA,f=1MHz
-
6.5
-
pF
CE=10V , I E= -10mA
※) It shows hFE classification in right table.
Item
C
D
E
hFE item
55~110
90~180
150~300
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC3244AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
COLLECTOR DISSIPATION Pc(mW)
1000
800
600
400
200
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC3244AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2012