SEMICONDUCTOR KF1N60L TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description B A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. D P DEPTH:0.2 G C S Q J K R FEATURES F ・RDS(ON)=10Ω(Max) @VGS = 10V F H ・Qg(typ) = 4.0nC H E M O 1 N 2 H 3 H L MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S M D ・VDSS= 600V, ID= 0.5A DIM A B C D N 1. GATE MAXIMUM RATING (Tc=25℃) 2. DRAIN 3. SOURCE CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V TC=25℃ Drain Current 0.5 ID TC=100℃ 0.31 A IDP 2.0 EAS 45 mJ EAR 1.3 mJ dv/dt 4.5 V/ns 5.4 W 0.043 W/℃ 1 W Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 23 ℃/W Thermal Resistance, Junction-toAmbient RthJA 125 ℃/W Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PIN CONNECTION TC=25℃ Drain Power Dissipation TO-92L Derate above 25℃ PD Ta=25℃ Maximum Junction Temperature Storage Temperature Range D G S Thermal Characteristics 2013. 1. 14 Revision No : 0 1/7 KF1N60L ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250㎂, Referenced to 25℃ - 0.6 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA RDS(ON) VGS=10V, ID=0.24A - 8.0 10.0 Ω - 4.0 - - 0.7 - - 2.3 - - 10 - - 10 - - 15 - Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=480V, ID=1A VGS=10V (Note4,5) VDD=300V ID=1A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 15 - Input Capacitance Ciss - 150 - Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - - - 0.7 - - 2.8 IS=0.47A, VGS=0V - - 1.4 V VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD Reverse Recovery Time trr IS=1A, VGS=0V, - 200 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.4 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=83mH, IS=1A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤1A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking KF1N60 L 001 1 2 1 PRODUCT NAME 2 LOT NO 2013. 1. 14 Revision No : 0 2/7 KF1N60L 24 20 16 12 8 4 0.5 1 1.5 2 2.5 0.175A 2013. 1. 14 Revision No : 0 3/7 KF1N60L Fig 7. C - VDS Fig8. Qg- VGS 12 Ciss 100 Coss 10 Crss 1 0 5 10 15 20 25 30 35 Gate - Source Voltage VGS (V) Capacitance (pF) 1000 ID=1A 10 8 6 VDS = 480V 4 2 0 0 40 1 2 3 4 5 6 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 1 0.8 10us 0.6 100us 1ms 0.4 10ms 0.2 DC 2013. 1. 14 Revision No : 0 4/7 KF1N60L [RthJC] 102 101 0.50 0.20 0.10 100 0.05 0.02 0.01 Single 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 [RthJA] 103 102 0.50 0.20 101 0.10 0.05 0.02 100 0.01 Single 10-1 -5 10 2013. 1. 14 10-4 Revision No : 0 10-3 10-2 10-1 100 101 102 103 5/7 KF1N60L 2013. 1. 14 Revision No : 0 6/7 KF1N60L 2013. 1. 14 Revision No : 0 7/7