SEMICONDUCTOR KN4400S/4401S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D Complementary to the KN4402S/4403S H UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V IC 600 mA PC * 350 mW Tj 150 Tstg -55 150 J RATING MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K SYMBOL P N CHARACTERISTIC 1 P ) C MAXIMUM RATING (Ta=25 3 G A 2 DIM A B C D E G H J K L M N P 1. EMITTER Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Note : * Package Mounted On 99.5% Alumina 10 8 0.6 2. BASE 3. COLLECTOR SOT-23 ) Marking Lot No. Type Name ZTA Type Name Lot No. ZUA MARK SPEC TYPE MARK KN4400S ZTA KN4401S ZUA 2007. 11. 12 Revision No : 2 1/3 KN4400S/4401S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=35V, VEB=0.4V - - 100 nA Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 6.0 - - V VCE=1V, IC=0.1mA 20 - - 20 - - 40 - - 40 - - 80 - - 50 - 150 100 - 300 20 - - 40 - - DC Current Gain * KN4401S hFE(1) KN4400S hFE(1) KN4401S hFE(2) KN4400S hFE(2) KN4401S hFE(3) KN4400S hFE(3) KN4401S hFE(4) KN4400S hFE(4) KN4401S hFE(5) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * KN4400S Transition Frequency KN4401S VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE(sat) 1 IC=150mA, IB=15mA - - 0.4 VCE(sat) 2 IC=500mA, IB=50mA - - 0.75 VBE(sat) 1 IC=150mA, IB=15mA 0.75 - 0.95 VBE(sat) 2 IC=500mA, IB=50mA - - 1.2 200 - - 250 - - - - 6.5 fT Cob Collector Output Capacitance VCE=1V, IC=1mA VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0, f=1MHz V V MHz pF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2007. 11. 12 Revision No : 2 2/3 KN4400S/4401S Cob - VCB hFE - IC 20 IE=0 VCE=1V CAPACITANCE Cob (pF) DC CURRENT GAIN hFE 1k 500 300 100 50 30 10 3 10 30 100 300 3 1k 10 30 100 VBE(sat), VCE(sat) - IC SAFE OPERATING AREA COLLECTOR CURRENT IC (mA) VBE(sat) 1 0.5 0.3 0.1 VCE(sat) 0.05 0.03 0.01 1 3 COLLECTOR-BASE VOLTAGE VCB (V) IC/IB=10 5 3 1 COLLECTOR CURRENT IC (mA) 10 SATURATION VOLTAGE VBE(sat), VCE(sat) (V) 5 1 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) 2007. 11. 12 f=100kHz 10 Revision No : 2 1k 300 10000 10mS* IC MAX(PULSE)* 1000 1mS* IC MAX(CONTINUOUS) 100 DC OPERATION(Ta=25 C ) 10 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 0.1 1 10 100 COLLECTOR-EMITTER VCE (V) 3/3