LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Unit VDS = 600V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 5.0 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 1A 3.8 gFS VDS = 50V, ID = 1A 1.2 S 250 pF 50 pF 30 pF 2 c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω 18 35 ns 18 35 ns 50 90 ns Turn-Off Fall Time tf 16 40 ns Total Gate Charge Qg 20 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2A, VGS = 10V 2 nC 12 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 2A h 2 A 1.5 V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.5A . h.Full package VSD test condition IS = 1.5A . 2/5 LESHAN RADIO COMPANY, LTD. L2N600 3.0 2.0 VGS=6V 1.5 1.0 VGS=5V 0.5 ID, Drain Current (A) ID, Drain Current (A) VGS=10,9,8,7V 2.5 TJ=150 C 10 0 -55 C 1.VDS=40V 2.Pulse Test 25 C 0 10 0 2 4 8 6 10 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 300 200 Coss Crss 0 0 5 10 15 20 25 10 2.2 1.9 ID=1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) C, Capacitance (pF) 8 Figure 2. Transfer Characteristics 100 VTH, Normalized Gate-Source Threshold Voltage 6 Figure 1. Output Characteristics 400 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 VGS, Gate-to-Source Voltage (V) 500 1.2 2 VDS, Drain-to-Source Voltage (V) 600 1.3 -1 12 10 0 25 50 75 100 125 150 VGS=0V 0 10 10 -25 1 -1 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3/5 LESHAN RADIO COMPANY, LTD. 1 15 10 VDS=480V ID=2A 10µs 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) L2N600 9 6 3 RDS(ON)Limit 0 10ms DC 10 -1 10 TC=25 C TJ=150 C Single Pulse -2 0 0 6 12 18 10 24 1ms 10 0 1 10 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 3 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 0 10 D=0.5 0.2 0.1 -1 PDM 10 0.05 t1 t2 0.02 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse -2 10 10 -5 -4 10 10 -3 -2 10 10 -1 10 0 1 10 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4/5 LESHAN RADIO COMPANY, LTD. L2N600 5/5