LRC LO4459PT1G

LESHAN RADIO COMPANY, LTD.
LO4459PT1G
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The LO4459PT1G uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is suitable
for use as a load switch or in PWM applications.
LO4459PT1G is a Green Product ordering option.
VDS (V) = -30V
ID = -6.5A
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 72mΩ (VGS = -4.5V)
.
D
SOP-8
Top View
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
TA=25°C
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation
A
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
A
Units
V
±20
V
-6.5
ID
IDM
-30
3.1
PD
W
2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
-5.3
-55 to 150
Symbol
A
Maximum
-30
RθJA
RθJL
Typ
33
62
18
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
-1.85
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
IS
VDS=-5V, ID=-6.5A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V)
Qg (4.5V) Total Gate Charge (4.5V)
nA
-3
V
68
VGS=-4.5V, I D=-4.2A
VSD
±100
46
TJ=125°C
gFS
72
11
-0.78
668
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, I D=-6.5A
µA
A
VGS=-10V, I D=-5.3A
Static Drain-Source On-Resistance
Units
V
VDS=-24V, V GS=0V
IGSS
RDS(ON)
Max
mΩ
mΩ
S
-1
V
-3.5
A
830
pF
126
pF
92
pF
6
9
12.7
16
Ω
nC
6.4
nC
2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
4
nC
tD(on)
Turn-On DelayTime
7.7
ns
tr
Turn-On Rise Time
6.8
ns
tD(off)
Turn-Off DelayTime
20
ns
tf
Turn-Off Fall Time
trr
Qrr
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
10
Body Diode Reverse Recovery Time
IF=-6.5A, dI/dt=100A/µs
22
Body Diode Reverse Recovery Charge
IF=-6.5A, dI/dt=100A/µs
15
ns
30
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
40
-10V
35
-8V
VDS=-5V
-5V
8
25
-4.5V
20
-4V
125°C
6
-ID(A)
-ID (A)
30
25°C
4
15
VGS=-3.5V
10
2
-40°C
5
0
0
0
1
2
3
4
5
0
1
-VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
100
VGS=-4.5V
60
VGS=-10V
40
Normalized On-Resistance
1.6
80
RDS(ON) (mΩ)
2
VGS=-10V
ID=-6.5A
1.4
VGS=-4.5V
ID=-5A
1.2
1.0
0.8
20
0
2
4
IF6=-6.5A, dI/dt=100A/µs
8
10
0.6
-50
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
150
200
1E+01
ID=-6.5A
1E+00
120
1E-01
100
1E-02
-IS (A)
RDS(ON) (mΩ)
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
140
0
125°C
125°C
80
1E-03
25°C FOR THE CONSUMER
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED
MARKET. APPLICATIONS OR USES AS CRITICAL
60
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
-40°CDESIGN,
-40°C
OUT OF SUCH
APPLICATIONS
OR
USES
OF
ITS
PRODUCTS.
AOS
RESERVES
THE
RIGHT TO IMPROVE PRODUCT
40
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-V
(Volts)
SD
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
Ciss
Capacitance (pF)
-VGS (Volts)
1000
VDS=-15V
ID=-6.5A
8
6
4
2
800
600
400
Coss
200
Crss
0
0
0
3
6
9
12
15
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
40
100µs
RDS(ON)
limited
10
1ms
10ms
1
TJ(Max)=150°C
TA=25°C
DC
1s
10s
0
0.001
IF=-6.5A,
dI/dt=100A/µs
10
100
1
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
20
10
100ms
0.1
0.1
30
Power (W)
-ID (Amps)
TJ(Max)=150°C
TA=25°C
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
T
Single
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Rev .O 4/4