ONSEMI MAC4SN

MAC4SM, MAC4SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
• High Immunity to dv/dt — 50 V/ms Minimum at 125_C
• Commutating di/dt — 3.0 A/ms Minimum at 125_C
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• On-State Current Rating of 4 Amperes RMS at 100_C
• High Surge Current Capability — 40 Amperes
• Blocking Voltage to 800 Volts
• Rugged, Economical TO220AB Package
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code
http://onsemi.com
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4SM
MAC4SN
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
IT(RMS)
4.0
Amps
ITSM
40
Amps
I2t
6.6
A2sec
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
Storage Temperature Range
Value
Unit
Volts
1
600
800
PGM
0.5
Watt
PG(AV)
0.1
Watt
TJ
– 40 to
+125
°C
– 40 to
+150
°C
Tstg
 Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2
Package
Shipping
MAC4SM
TO220AB
50 Units/Rail
MAC4SN
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MAC4SM/D
MAC4SM, MAC4SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Symbol
Value
Unit
RθJC
RθJA
2.2
62.5
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
0.01
2.0
—
1.3
1.6
2.9
2.9
2.9
4.0
4.7
6.0
10
10
10
2.0
5.0
15
—
—
—
6.0
15
6.0
30
30
30
0.5
0.5
0.5
0.7
.65
0.7
1.3
1.3
1.3
(di/dt)c
3.0
4.0
—
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
dv/dt
50
150
—
V/µs
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
di/dt
—
—
10
A/µs
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM = ± 6.0 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs, Gate Open,
TJ = 125°C, f = 500 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
MAC4SM, MAC4SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
IDRM
Peak Forward Blocking Current
VRRM
IRRM
VTM
IH
VTM
Peak Repetitive Forward Off State Voltage
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
off state
IH
Holding Current
Quadrant 3
VTM
MainTerminal 2 –
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
IGT –
+ IGT
(–) MT2
(–) MT2
Quadrant III
Quadrant IV
(+) IGT
GATE
(–) IGT
GATE
MT1
MT1
REF
REF
–
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
http://onsemi.com
3
+ Voltage
IDRM at VDRM
MAC4SM, MAC4SN
1.0
Q3
10
VGT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
Q1
0.9
0.8
0.7
0.6
Q1
0.4
0.3
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
– 40 – 25 – 10
5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
IH, HOLDING CURRENT (mA)
IL , LATCHING CURRENT (mA)
100
Q2
Q1
10
Q3
10
MT2 Positive
MT2 Negative
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
1
– 40 – 25 – 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Typical Latching Current
versus Junction Temperature
TC , CASE TEMPERATURE (°C)
125
120
30°
115
60°
90°
120°
110
180°
105
Q3
Q2
0.5
DC
0
0.5
1
1.5
2
2.5
3
3.5
IT(RMS), RMS ON-STATE CURRENT (AMP)
4
6
DC
5
180°
120°
4
90°
60°
3
30°
2
1
0
0
Figure 5. Typical RMS Current Derating
1
2
3
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 6. On-State Power Dissipation
http://onsemi.com
4
4
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
Typical @ TJ = 125°C
Maximum @ TJ = 125°C
10
1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MAC4SM, MAC4SN
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
http://onsemi.com
5
10000
MAC4SM, MAC4SN
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
–T–
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 4:
PIN 1.
2.
3.
4.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
MAC4SM, MAC4SN
Notes
http://onsemi.com
7
MAC4SM, MAC4SN
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time)
Email: [email protected]
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, England, Ireland
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–8549
Phone: 81–3–5740–2745
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
MAC4SM/D