RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V 5/14/04 MAPLST0810-090CF Preliminary Features Q Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 90W (P1dB) Q Gain: 18dB Q Efficiency: 50% Ruggedness: 10:1 VSWR @ 90W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Internal Input Match Excellent Thermal Stability P-238 Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 206 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 0.85 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 1 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 3 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µA) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mA) VDS(Q) — 4.0 — Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) VDS(on) — 0.20 — Vdc Forward Transconductance (VGS = 10 Vdc, ID = 1 A) Gm — 7 — S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss — 98 — pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 4.5 — pF Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) GP — 18 — dB Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) EFF (ŋ) — 50 — % Input Return Loss (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) IRL — 12 — dB Two-Tone Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) GP — 18 — dB Two-Tone Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) EFF (ŋ) — 38 — % Two-Tone Intermodulation Distortion (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) IMD — -30 — dBc DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) DYNAMIC CHARACTERISTICS @ 25ºC RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 700 mA, f = 900 MHz, POUT = 90 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary 60 18 50 17 40 16 30 Gain (26V) 14 38 43 4 10 1 0 0 48 53 EVM (26volts) 3 Efficiency (26V) EVM (28volts) 2 38 40 42 44 46 48 POUT(dBm- Avg.) Graph 1. CW Power Gain and Efficiency vs. Output Power -25 5 Gain (28V) POUT(dBm- Avg.) -20 6 20 Efficiency (28V) 13 EDGE: 870MHz, VDD = 26/28V, IDQ=700mA 7 EVM(%) 19 15 8 70 CW: f = 870MHz, VDD = 26/28V, IDQ=700mA Efficiency (%) Gain(dB) 20 Graph 2. EDGE RMS EVM vs. Output Power 2-TONE: f = 870MHz, VDD = 26/28V, IDQ = 700mA IMD (dBc) -30 -35 -40 -45 -50 -55 IM3 (26V) -60 IM3 (28V) -65 40 42 44 45 46 47 POUT (dBm - Avg.) Graph 3. Two-Tone Intermodulation vs. Output Power 3 RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020