SANYO MCH6444

MCH6444
Ordering number : EN8935
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
MCH6444
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance RDS(on)1=75mΩ (typ.)
4V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
10
A
W
150
°C
--55 to +150
°C
0.15
Packing Type : TL
4
TL
0.3
Electrical Connection
0.85
0.25
3
0.65
ZT
LOT No.
2
LOT No.
0.07
Marking
0 t o 0.02
2.1
1.6
0.25
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
1
A
0.8
Product & Package Information
5
V
2.5
When mounted on ceramic substrate (900mm2×0.8mm)
unit : mm (typ)
7022A-009
6
V
±20
PW≤10μs, duty cycle≤1%
Package Dimensions
2.0
Unit
35
1
2
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
6
5
4
SANYO : MCPH6
1, 2, 5, 6
3
4
http://semicon.sanyo.com/en/network
62911PE TKIM TC-00002620 No.8935-1/4
MCH6444
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
Conditions
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=35V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
ID=1.5A, VGS=10V
75
98
mΩ
RDS(on)2
ID=0.75A, VGS=4.5V
118
166
mΩ
RDS(on)3
ID=0.75A, VGS=4V
143
201
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
186
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
22
pF
Turn-ON Delay Time
td(on)
tr
See specified Test Circuit.
4.2
ns
See specified Test Circuit.
4.7
ns
td(off)
tf
See specified Test Circuit.
15
ns
See specified Test Circuit.
5.7
ns
Total Gate Charge
Qg
nC
Qgs
VDS=20V, VGS=10V, ID=2.5A
VDS=20V, VGS=10V, ID=2.5A
4
Gate-to-Source Charge
0.9
nC
VDS=20V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0V
0.86
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Rise Time
Turn-OFF Delay Time
Fall Time
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
35
V
1.2
1
μA
±10
μA
2.6
VDS=10V, ID=1.5A
1.7
V
S
0.7
nC
1.2
V
Switching Time Test Circuit
10V
0V
VDD=15V
VIN
ID=1.5A
RL=10Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
MCH6444
50Ω
ID -- VDS
0V
4.5
V
4.
3.5V
1.0
3.0V
3
2
Ta=
7
1
0.5
VGS=2.5V
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
1.0
IT16513
0
0
1
2
25°C --25°C
Drain Current, ID -- A
1.5
VDS=10V
4
16.0V
2.0
ID -- VGS
5
6.0V
10.0V
2.5
Drain Current, ID -- A
S
5°C
P.G
3
4
Gate-to-Source Voltage, VGS -- V
5
6
IT16514
No.8935-2/4
MCH6444
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
ID=0.75A
1.5A
200
150
100
50
10
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
2
5°C
--2
=
C
Ta
75°
5
°C
25
3
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
100
--40
--20
0
20
40
60
80
100
120
140
160
IT16516
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
5
2
td(off)
10
tr
7
5
tf
td(on)
3
0.2
0.4
0.6
0.8
1.0
1.2
IT16518
Ciss, Coss, Crss -- VDS
1000
f=1MHz
7
5
Ciss, Coss, Crss -- pF
3
0
Diode Forward Voltage, VSD -- V
VDD=15V
VGS=10V
7
Switching Time, SW Time -- ns
50
0.01
5 7 10
IT16517
Drain Current, ID -- A
2
3
Ciss
2
100
7
5
Coss
3
Crss
2
1.0
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
7
10
10
100
7
5
3
2
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Total Gate Charge, Qg -- nC
5
10
3.5
4.0
4.5
IT16521
15
20
25
30
Drain-to-Source Voltage, VDS -- V
VDS=20V
ID=2.5A
9
0
IT16519
VGS -- Qg
10
Gate-to-Source Voltage, VGS -- V
100
3
2
2
0
150
10
7
5
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
7
A
0.75
, I D=
V
4
=
VGS
5A
=0.7
V, I D
5
.
4
=
VGS
=1.5A
10V, I D
=
S
VG
Ambient Temperature, Ta -- °C
5
1.0
200
0
--60
16
VDS=10V
7
250
IT16515
| yfs | -- ID
10
RDS(on) -- Ta
300
Ta=25°C
Ta=7
5°C
25°C
--25°
C
300
10
7
5
3
2
ASO
IDP=10A (PW≤10μs)
10
1 0μs
10 ms
10 ms
0m
s
ID=2.5A
DC
1.0
7
5
3
2
0.1
7
5
3
2
35
IT16520
op
er
ati
on
Operation in this area
is limited by RDS(on).
(T
a=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
5 7100
IT16511
No.8935-3/4
MCH6444
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
When mounted on ceramic substrate
(900mm2×0.8mm)
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16512
Note on usage : Since the MCH6444 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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the performance, characteristics, and functions of the described products in the independent state, and are
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This catalog provides information as of June, 2011. Specifications and information herein are subject
to change without notice.
PS No.8935-4/4