MITSUBISHI MGFK38A3745

< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
DESCRIPTION
The MGFK38A3745 is an internally impedance-matched
GaAs power FET especially designed for use in 13.75 – 14.50
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=6W (TYP.) @f=13.75 – 14.50GHz
 High linear power gain
GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz
 High power added efficiency
P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz
APPLICATION
 13.75 – 14.50 GHz band power amplifiers
QUALITY GRADE
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=1.5A  RG=100ohm
Absolute maximum ratings
Symbol
VGDO
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Ratings
Unit
-15
V
VGSO
Gate to source breakdown voltage
-10
V
PT *1
Total power dissipation
37.5
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
-4
V
VGS(off)
P1dB
Gate to source cut-off voltage
VDS=3V,ID=21mA
-1
-1.5
Output power at 1dB gain compression
VDS=10V,ID(RF off)=1.5A
37
38
-
dBm
GLP
Linear Power Gain
f=13.75 – 14.50GHz
7
8
-
dB
ID
Drain current
PAE
Power added efficiency
Rth(ch-c) *2
Thermal resistance
1.8
delta Vf method
*2 : Channel-case
Publication Date : Apr., 2011
1
A
-
30
-
%
-
3.6
4
C/W
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
MGFK38A3745 TYPICAL CHARACTERISTICS
f = 13.75GHz
Pout, Glp, PAE, Id, Ig vs. Pin
f = 14.125GHz
f = 14.5GHz
Test Condition : Vds=10V,Idq=1.5A, Rg=100ohm,Ta=25deg.C
f = 13.75GHz
IM3, IM5 vs. Pin
f = 14.125GHz
Test Condition : Vds=10V,Idq=1.5A,Rg=100ohm,Ta=25deg.C
2-tone test,Δf=10MHz
Publication Date : Apr., 2011
2
f = 14.50GHz
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
MGFK38A3745 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.5(A) )
S Parameters(Typ.)
f
(GHz)
S11
S21
S12
S22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
13.0
0.81
171.04
1.63
-76.74
0.02
-16.21
0.59
137.23
13.1
0.78
165.69
1.73
-83.87
0.02
-35.59
0.59
130.28
13.2
0.75
159.52
1.85
-91.37
0.03
-56.56
0.59
123.52
13.3
0.71
152.49
1.96
-99.00
0.03
-74.01
0.59
117.33
13.4
0.68
145.21
2.07
-107.14
0.04
-91.03
0.59
109.70
13.5
0.64
137.10
2.19
-115.49
0.04
-107.57
0.58
102.62
13.6
0.58
128.83
2.32
-124.10
0.05
-119.61
0.57
94.61
13.7
0.53
119.41
2.45
-133.09
0.06
-133.66
0.56
85.76
13.8
0.46
107.91
2.57
-142.78
0.07
-145.04
0.54
75.60
13.9
0.38
94.82
2.69
-153.07
0.08
-158.70
0.51
64.08
14.0
0.30
78.06
2.80
-163.74
0.09
-171.17
0.49
51.72
14.1
0.22
55.02
2.88
-174.75
0.10
175.35
0.46
36.88
14.2
0.15
18.65
2.95
173.32
0.11
160.87
0.42
19.98
14.3
0.14
-35.59
2.95
160.62
0.12
148.25
0.38
1.33
14.4
0.19
-79.67
2.88
148.21
0.12
134.98
0.36
-19.05
14.5
0.26
-104.31
2.75
136.23
0.12
122.82
0.34
-40.14
14.6
0.33
-120.66
2.57
125.07
0.11
111.09
0.32
-59.43
14.7
0.39
-132.01
2.40
115.11
0.11
102.41
0.31
-76.85
14.8
0.45
-141.21
2.23
105.99
0.11
93.61
0.33
-91.26
14.9
0.50
-148.69
2.08
97.52
0.10
85.62
0.34
-103.83
15.0
0.54
-155.43
1.94
89.56
0.10
77.89
0.36
-113.31
Publication Date : Apr., 2011
3
< X/Ku band internally matched power GaAs FET >
MGFK38A3745
13.75 – 14.50 GHz BAND / 6W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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Publication Date : Apr., 2011
4