MITSUBISHI MGFL48V1920

< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
DESCRIPTION
The MGFL48V1920 is a 60W push-pull type GaAs power FET
especially designed for use in 1.9 - 2.0 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees
high reliability.
FEATURES
Push-pull configuration
 High output power
Pout=60W (TYP.) @f=1.9 - 2.0GHz
 High power gain
GLP=11.5dB (TYP.) @f=1.9 - 2.0GHz
 High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
APPLICATION
 item 01 : 1.9 - 2.0 GHz band power amplifier
QUALITY
 IG
RECOMMENDED BIAS CONDITIONS
 VDS=12V  ID=4.0A  RG=20ohm for each gate
Keep Safety first in your circuit designs!
Absolute maximum ratings
Symbol
(Ta=25C)
Ratings
Unit
Gate to drain breakdown voltage
-20
V
VGSO
Gate to source breakdown voltage
-10
V
PT *1
Total power dissipation
10
W
VGDO
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Parameter
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
Unit
Typ.
Max.
Gate to source cut-off voltage
VDS=3V,ID=17.3mA
-1
-
-4
V
Output power at 2dB gain compression
VDS=12V,ID(RF off)=4.0A
47
48
-
dBm
GLP
Linear Power Gain
f=1.9 - 2.0GHz
10
11.5
-
dB
ID
Drain current
-
11
15
A
P.A.E.
Power added efficiency
-
45
-
%
Rth(ch-c) *2
Thermal resistance
-
1.0
1.4
C/W
VGS(off)
P2dB
delta Vf method
*2 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
MGFL45V1920 TYPICAL CHARACTERISTICS
Pout , PAE vs. Pin
Test Condition : Idq=4A,Ta=25deg.C
IMD vs. Pout
Test Condition : Vds=12V,Idq=4A,Ta=25deg.C
2-tone test , Δf=5MHz
Publication Date : Apr., 2011
2
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
MGFL45V1920 RF TEST FIXTURE
Publication Date : Apr., 2011
3
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
MGFL48V1920 S-parameters( Ta=25deg.C , VDS=12(V),IDS=1.5(A) )
Publication Date : Apr., 2011
4
< L/S band internally matched power GaAs FET >
MGFL48V1920
1.9 – 2.0 GHz BAND / 60W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
5