STMICROELECTRONICS MJD122-1

MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
Ordering
Code
MJD122T4
MJD122-1
MJD127T4
MJD127-1
Marking
MJD122
MJD122
MJD127
MJD127
Package
TO-252
TO-251
TO-252
TO-251
(DPAK)
(IPAK)
(DPAK)
(IPAK)
Shipment
Tape & Reel
Tube
Tape & Reel
Tube
3
■
■
■
■
■
■
3
STMicroelectronics PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”)
SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
1
2
1
TO-251
TO-252
DPAK
(Suffix ”T4”)
IPAK
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS:
■
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epi taxial Bas e technology for cost-eff ective
performance.
R 2 Typ. = 150 Ω
R1 Typ. = 10 KΩ
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
MJD122
PNP
MJD127
Unit
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
Collector Current
5
A
Collector Peak Current (tp < 5 ms)
8
A
IC
ICM
IB
Base Current
0.1
A
P tot
Total Dissipation at Tc = 25 °C
20
W
Tstg
Storage Temperature
–65 to 150
°C
150
°C
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
August 2002
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
THERMAL DATA
Rthj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
6.25
100
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
Parameter
VCB = 100 V
10
µA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 50 V
10
µA
ICEX
Collector Cut-off
Current (VBE = -1.5 V)
VCE = 100 V
VCE = 100 V
10
500
µA
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
Test Conditions
Min.
Tj = 125 °C
IC = 30 mA
Typ.
100
V
VCE(sat)*
Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 8 A
IB = 16 mA
IB = 80 mA
2
4
V
V
VBE(sat)*
Base-Emitter
Saturation Voltage
IC = 8 A
IB = 80 mA
4.5
V
VBE(on)*
Base-Emitter On
Voltage
IC = 4 A
VCE = 4 V
2.8
V
hFE*
DC Current Gain
IC = 4 A
IC = 8 A
VCE = 4 V
VCE = 4 V
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
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1000
100
12000
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Safe Operating Area
Derating Curve
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Switching Times Resistive Load (NPN type)
Switching Times Resistive Load (PNP type)
4/8
MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
0.033
0.30
B6
0.012
0.95
0.037
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
0.80
V1
10o
1.00
0.047
0.031
0.039
10o
P032N_E
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
L4
V2
0.8
0.60
0
o
0.031
1.00
8
o
0.024
0
o
0.039
0
o
P032P_B
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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